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Integer and fractional quantum Hall effect in graphene heterostructure

Title
Integer and fractional quantum Hall effect in graphene heterostructure
Author(s)
Kim, Youngwook
Issued Date
2023-03
Citation
Progress in Superconductivity and Cryogenics, v.25, no.1, pp.1 - 5
Type
Article
Author Keywords
graphenequantum Hall effectfractional quantum Hall effecthigh magnetic field
ISSN
1229-3008
Abstract
The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime. © 2023, Korea Institute of Applied Superconductivity and Cryogenics. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/46348
DOI
10.9714/psac.2023.25.1.001
Publisher
Korea Institute of Applied Superconductivity and Cryogenics
Related Researcher
  • 김영욱 Kim, Youngwook
  • Research Interests Quantum Transport; Mesoscopic Physics
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Appears in Collections:
Department of Physics and Chemistry Nanomaterials and Quantum Device Lab 1. Journal Articles

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