Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 장재은 | - |
| dc.contributor.author | Su Jin Heo | - |
| dc.date.accessioned | 2023-09-18T21:00:50Z | - |
| dc.date.available | 2023-09-18T21:00:50Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/46410 | - |
| dc.identifier.uri | http://dgist.dcollection.net/common/orgView/200000684276 | - |
| dc.description | Vacuum diode; Vacuum transistor; Tunneling; Nano vacuum chamber; Environment stability | - |
| dc.description.tableofcontents | I. Introduction 1 1.1 Overview 1 1.2 Background 4 1.2.1 Quantum tunneling 4 1.2.2 The history of vacuum tube 6 1.2.3 Electron emission 8 1.2.4 Metal-Insulator-Metal tunneling 10 1.3 Related works and Motivation 16 1.4 Objective 23 II. Vacuum tunneling device 25 2.1 Introduction 25 2.2 Vacuum tunneling diode 25 2.2.1 Electric field simulation 25 2.2.2 Experimental details and Electrical characteristic 26 2.2.3 Geometry effect of vacuum tunneling diode 30 2.3 Vacuum tunneling transistor 34 2.3.1 Electric field simulation 34 2.3.2 Experimental details 35 2.3.3 Electrical characteristics 38 III. Various vacuum tunneling transistor 43 3.1 Introduction 43 3.2 Lateral floating electrode tunneling transistor 43 3.2.1 Lateral structure vacuum tunneling transistor 43 3.2.2 Lateral vacuum transistor with multi tip structure 46 3.2.3 Lateral vacuum transistor with floating electrode 50 3.3 Dual gate graphene vacuum tunneling transistor 55 3.3.1 Electron field emission of graphene 55 3.3.2 Experimental details 60 3.3.3 Electrical characteristics 63 IV. Vacuum sealed tunneling transistor 71 4.1 Introduction 71 4.2 Tilted angle evaporation for vacuum sealing 71 4.2.1 Particle path simulation 71 4.2.2 Fabrication and structural analysis 77 4.2.3 Durability and stability properties of vacuum sealing layer 86 4.3 Nano vacuum tube 90 4.3.1 Experimental details 90 4.3.2 Electric field simulation 94 4.3.3 Electrical characteristics 96 V. Vacuum tunneling transistor for robust applications 100 5.1 Introduction 100 5.2 Ultraviolet exposure 100 5.3 High temperature 104 5.4 High frequency 107 VI. Conclusion 117 6.1 Summary 117 6.2 Future works 118 References 121 |
- |
| dc.format.extent | 130 | - |
| dc.language | eng | - |
| dc.publisher | DGIST | - |
| dc.title | Nano Vacuum Tunneling Devices | - |
| dc.type | Thesis | - |
| dc.identifier.doi | 10.22677/THESIS.200000684276 | - |
| dc.description.degree | Doctor | - |
| dc.contributor.department | Department of Electrical Engineering and Computer Science | - |
| dc.contributor.coadvisor | Chang Hee Cho | - |
| dc.date.awarded | 2023-08-01 | - |
| dc.publisher.location | Daegu | - |
| dc.description.database | dCollection | - |
| dc.citation | XT.ID 허56 202308 | - |
| dc.date.accepted | 2023-09-14 | - |
| dc.contributor.alternativeDepartment | 전기전자컴퓨터공학과 | - |
| dc.subject.keyword | Vacuum diode | - |
| dc.subject.keyword | Vacuum transistor | - |
| dc.subject.keyword | Tunneling | - |
| dc.subject.keyword | Nano vacuum chamber | - |
| dc.subject.keyword | Environment stability | - |
| dc.contributor.affiliatedAuthor | Su Jin Heo | - |
| dc.contributor.affiliatedAuthor | Jae Eun Jang | - |
| dc.contributor.affiliatedAuthor | Chang Hee Cho | - |
| dc.contributor.alternativeName | 허수진 | - |
| dc.contributor.alternativeName | Jae Eun Jang | - |
| dc.contributor.alternativeName | 조창희 | - |
| dc.rights.embargoReleaseDate | 2024-08-31 | - |
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