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dc.contributor.author Lee, Nyun Jong -
dc.contributor.author Jang, Heechan -
dc.contributor.author Park, Eunkang -
dc.contributor.author Lee, Ki-Seung -
dc.contributor.author Jeong, Seyeop -
dc.contributor.author Lee, Soogil -
dc.contributor.author Park, Byong-Guk -
dc.contributor.author You, Chun-Yeol -
dc.contributor.author Kim, Kyoung-Whan -
dc.contributor.author Kim, Sanghoon -
dc.date.accessioned 2024-02-03T00:10:39Z -
dc.date.available 2024-02-03T00:10:39Z -
dc.date.created 2023-12-22 -
dc.date.issued 2023-12 -
dc.identifier.issn 2331-7019 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/47740 -
dc.description.abstract Unidirectional magnetoresistance (UMR) is a magnetoresistance family that arises from spin-current generation in ferromagnet (FM)/nonmagnetic heavy metal (HM) bilayers. Because UMR exhibits asymmetric behavior owing to the current or external magnetic field directions, it is easy to quantify the amount of charge-to-spin conversion in a system and the sign of the spin current. UMR has been explained by two major mechanisms: spin accumulation at the FM/HM interface and electron-magnon scattering in an FM layer. In this study, we investigated the thickness and temperature dependence of the UMR of Ta/Co and Pt/Co bilayer structures and numerically analyzed the contribution of the electron-magnon scattering using a self-developed quantitative-analysis model. The magnon UMR was dominant in the Pt/Co samples, and the spin-accumulation-UMR and magnon-UMR trends were separated in the Ta/Co samples by thickness. The magnitude of the UMR strongly depends on the choice of the HM. Our findings provide a method to quantitatively separate the contributions of each mechanism. © 2023 American Physical Society. -
dc.language English -
dc.publisher American Physical Society -
dc.title Quantitative analysis of magnon characteristics with unidirectional magnetoresistance -
dc.type Article -
dc.identifier.doi 10.1103/PhysRevApplied.20.064006 -
dc.identifier.wosid 001156170900001 -
dc.identifier.scopusid 2-s2.0-85179629079 -
dc.identifier.bibliographicCitation Physical Review Applied, v.20, no.6 -
dc.description.isOpenAccess FALSE -
dc.citation.number 6 -
dc.citation.title Physical Review Applied -
dc.citation.volume 20 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Physics -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.type.docType Article -
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Department of Physics and Chemistry Spin Phenomena for Information Nano-devices(SPIN) Lab 1. Journal Articles

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