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One-step and controllable bipolar doping of reduced graphene oxide using TMAH as reducing agent and doping source for field effect transistors
- One-step and controllable bipolar doping of reduced graphene oxide using TMAH as reducing agent and doping source for field effect transistors
- Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun
- DGIST Authors
- Baek, Seong-Ho; Kim, Jae Hyun
- Issue Date
- Carbon, 100, 608-616
- Article Type
- Ammonium Hydroxide; Carrier Concentration; Electron Withdrawing Group; Field-Effect Devices; Field Effect Transistors; Flexible Electronic Devices; Graphene; Graphene Transistors; Low Temperature Method; Low Temperature Production; Low Temperatures; Reduced-Graphene Oxides; Simultaneous Reduction; Temperature; Tetramethyl Ammonium Hydroxide; Work-Function
- Simultaneous reduction and doping of the graphene oxide (GO) is an important issue for low temperature processed flexible electronic devices. A low temperature method for reduction and ambipolar doping has been developed which yield the doped reduced GO with wide range of work function with a mass production using tetra-methyl ammonium hydroxide (TMAH). The doping type of obtained reduced GO is tuned with TMAH concentration. XPS analysis revealed that the graphitic N is converted to oxidized N with increase of TMAH concentration. The work function is tuned via wide range variation in the carrier concentration in neutral (rGO-A, 4.46 eV), n-type (rGO-B, 3.90 eV) and p-type (rGO-C, 5.29 eV) regimes. The obtained Dirac voltages of field effect devices are -1 V, -31 V and +35 V with active layer of rGO-A, rGO-B and rGO-C, respectively. The n-type doping is due to incorporation of graphitic N, whereas, oxidized N acts as electron withdrawing group which causes p-type doping. © 2016 Elsevier Ltd. All rights reserved.
- Elsevier Ltd
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