Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yang, Kee-Jeong | - |
dc.contributor.author | Son, Dae-Ho | - |
dc.contributor.author | Sung, Shi-Joon | - |
dc.contributor.author | Sim, Jun-Hyoung | - |
dc.contributor.author | Kim, Young-Ill | - |
dc.contributor.author | Park, Si-Nae | - |
dc.contributor.author | Jeon, Dong-Hwan | - |
dc.contributor.author | Kim, Jung Sik | - |
dc.contributor.author | Hwang, Dae-Kue | - |
dc.contributor.author | Jeon, Chan-Wook | - |
dc.contributor.author | Nam, Dahyun | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Kang, Jin-Kyu | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.date.accessioned | 2018-01-25T01:09:11Z | - |
dc.date.available | 2018-01-25T01:09:11Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.issn | 2050-7488 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5143 | - |
dc.description.abstract | Although Cu2ZnSn(S,Se)4 (CZTSSe) has attracted attention as an alternative to CuInGaSe2 (CIGS) as an absorber material in solar cells, its low efficiency is a serious shortcoming preventing its commercialization. To realize a high-efficiency CZTSSe solar cell, improved grain crystallinity, inhibited secondary-phase formation, controlled defect generation, adequate Na content, and band gap grading are required in the absorber layer. Few studies have focused specifically on band gap grading. In this study, a method of using SeS2, a new potential chalcogenization source material, to control the S and Se contents in a CZTSSe absorber and its effects were investigated. Using an appropriate SeS2/Se weight ratio, band gap grading was realized within the depletion region. By increasing the value of VOC through band gap grading in the depletion region, a record VOC deficit of 0.576 V was achieved. Furthermore, the possibility of enhancing JSC through the formation of a type-inverted n-type phase at the absorber surface in response to an appropriate alignment of the conduction-band minimum energy level and the Fermi energy pinning level is discussed. By introducing the chalcogenization source material SeS2 during the annealing process, CZTSSe solar cells with a maximum efficiency of 12.3% were obtained. © The Royal Society of Chemistry 2016. | - |
dc.language | English | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | A band-gap-graded CZTSSe solar cell with 12.3% efficiency | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c6ta01558a | - |
dc.identifier.scopusid | 2-s2.0-84976609329 | - |
dc.identifier.bibliographicCitation | Journal of Materials Chemistry A, v.4, no.26, pp.10151 - 10158 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CU2ZNSNS4 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.citation.endPage | 10158 | - |
dc.citation.number | 26 | - |
dc.citation.startPage | 10151 | - |
dc.citation.title | Journal of Materials Chemistry A | - |
dc.citation.volume | 4 | - |
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