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Influence of sulfate residue on Cu2ZnSnS4 thin films prepared by direct solution method
- Influence of sulfate residue on Cu2ZnSnS4 thin films prepared by direct solution method
- Viet Tuyen Nguyen; Nam, Dahyun; Gansukh, Mungunshagai; Park, Si-Nae; Sung, Shi-Joon; Kim, Dae-Hwan; Kang, Jin-Kyu; Cong Doanh Sai; Thi Ha Tran; Cheong, Hyeonsik
- DGIST Authors
- Sung, Shi-Joon; Kim, Dae-Hwan; Kang, Jin-Kyu
- Issue Date
- Solar Energy Materials and Solar Cells, 136, 113-119
- Article Type
- Atomic Force Microscopy; Cadmium Sulfide; Chemical-Bath Deposition; Copper; Copper-Zinc-Tin Sulfide; Copper Zinc Tin Sulfides; Direct Solution Method; Film Preparation; High-Efficiency Solar Cells; Laser Beam Induced Current; Laser Beams; Poor Crystallinity; Raman Spectroscopy; Residue; Solar Cells; Sulfur Compounds; Sulfurization; Thin-Films; Zinc Sulfide
- Raman scattering and atomic force microscopy measurements on Cu2ZnSnS4 thin films prepared by a direct solution method revealed that metal sulfates of various morphologies (dense clusters or separated particles) were partially embedded on the surface of the Cu2ZnSnS4 layer. This residue was removed during the subsequent chemical bath deposition of the CdS buffer layer. However, the removal of the residue led to poor crystallinity and reduced photocurrent near the location of the residue, which suggests that controlling the formation of the sulfates during the fabrication of the absorber layer would be critical for obtaining high efficiency solar cells by the solution method. © 2015 Elsevier B.V. All rights reserved.
- Elsevier B.V.
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- Convergence Research Center for Solar Energy1. Journal Articles
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