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High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

Title
High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering
Authors
Hwang, Dae-KueKim, Kang-PilKim, Dae-Hwan
DGIST Authors
Hwang, Dae-KueKim, Kang-PilKim, Dae-Hwan
Issue Date
2013-11-01
Citation
Thin Solid Films, 546, 18-21
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Compound SemiconductorCompound SemiconductorsFull Width Half MaximumII-VIMagnetron SputteringMetallic FilmsNon-PolarOptical FilmsOxygen-Rich ConditionsRadio Frequency Magnetron SputteringSapphireSputteringThin-FilmsThin FilmX Ray Rocking CurveZnO
ISSN
0040-6090
Abstract
Nonpolar, a-plane(112̄0)ZnO thin films were epitaxially grown on r-plane(11̄02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O 2 partial pressure of the Ar/O2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(112̄0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O 2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O2 ratio: 1/2), enhancing the lateral growth along the c-axis direction. © 2013 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/5292
DOI
10.1016/j.tsf.2013.03.063
Publisher
Elsevier
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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