Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Hwang, Dae-Kue | - |
dc.contributor.author | Kim, Kang-Pil | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.date.accessioned | 2018-01-25T01:12:54Z | - |
dc.date.available | 2018-01-25T01:12:54Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5292 | - |
dc.description.abstract | Nonpolar, a-plane(112̄0)ZnO thin films were epitaxially grown on r-plane(11̄02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O 2 partial pressure of the Ar/O2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(112̄0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O 2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O2 ratio: 1/2), enhancing the lateral growth along the c-axis direction. © 2013 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier | - |
dc.title | High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2013.03.063 | - |
dc.identifier.scopusid | 2-s2.0-84885296654 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.546, pp.18 - 21 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Nonpolar | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | II-VI | - |
dc.subject.keywordAuthor | Compound semiconductor | - |
dc.citation.endPage | 21 | - |
dc.citation.startPage | 18 | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 546 | - |
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