Cited 1 time in
Cited 3 time in
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
- Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
- Park, Mi Sun; Lee, Doo Hyoung; Bae, Eun Jin; Kim, Dae-Hwan; Kang, Jin Gyu; Son, Dae-Ho; Ryu, Si Ok
- DGIST Authors
- Kim, Dae-Hwan; Kang, Jin Gyu
- Issue Date
- Molecular Crystals and Liquid Crystals, 529, 137-146
- Article Type
- Acetonitrile; Amorphous Films; Chemical Properties; Coatings; Conducting Oxides; De-Wetting; Deposition; Deposition Process; Ethylene; Ethylene Glycol; Fabrication; Field-Effect Mobilities; Field Effect Transistors; Film Preparation; Indium Gallium Zinc Oxide (IGZO); Indium Gallium Zinc Oxides; Low-Cost Solution; Metal-Oxide-Semiconductor Field-Effect Transistor; Metal Halide; Metal Halides; Molar Ratio; MOS-FET; MOSFET Devices; Organic Solvents; Oxide Films; Precursor Solutions; Semiconducting Indium; Solution-Based Deposition; Spin-Coating Process; TFTs; Thin-Film Transistors (TFTs); Thin-Films; Thin Film; Transparent Amorphous Conducting Oxide Semiconductor; Transparent Conducting Oxide; Turn On Voltage; Vapor Deposition; Visible Region; Volume Ratio; Zinc; Zinc Coatings; Zinc Oxide; ZnO Structures
- Highly transparent (90% in the visible region) indium gallium zinc oxide (IGZO) thin films were deposited using a spin coating process with a newly developed precursor solution. Acetonitrile was used as the solvent in the preparation of the metal halide precursor solution for the deposition of the IGZO thin films. Ethylene glycol was added to the solvent at four different volume ratios of acetonitrile to ethylene glycol to complement the chemical properties of acetonitrile in order to avoid the de-wetting phenomenon during the deposition process. The IGZO thin films were prepared at a stoichiometric molar ratio of 2:2:1 on the basis of the theoretical In2O3-Ga2O3-ZnO structure. The IGZO metal-oxide-semiconductor field-effect transistor (MOSFET), with a field-effect mobility (FE) as high as 1.1cm2/V s, a turn on voltage of 15.8V, and a current on-to-off ratio greater than 107, was successfully fabricated in this study. This low cost solution-based deposition process was applicable for the fabrication of transparent conducting oxide (TCO)-based devices. © Taylor & Francis Group, LLC.
- Taylor and Francis Ltd.
- Related Researcher
There are no files associated with this item.
- Convergence Research Center for Solar Energy1. Journal Articles
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.