Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Taejin | - |
dc.contributor.author | Kim, Jihong | - |
dc.contributor.author | Lee, Sungjin | - |
dc.date.accessioned | 2018-02-05T04:12:29Z | - |
dc.date.available | 2018-02-05T04:12:29Z | - |
dc.date.created | 2018-01-18 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/5643 | - |
dc.description.abstract | Data deduplication is an effective solution in improving the lifetime of flash-based solid-state drives (SSDs) by preventing redundant data from being written to flash memory. Existing deduplication techniques for SSDs, however, fail to fully eliminate potential redundant data because of their coarse-grained granularity. In this paper, a fine-grained deduplication technique for SSDs, called FineDedup, is proposed to improve the likelihood of eliminating redundant data. FineDedup also resolves technical difficulties caused by its finer granularity, i.e., increased memory requirement and read response time. The results show that FineDedup reduces the amount of written data by up to 24% over existing techniques with negligible. © 2017, Institute of Electronics Engineers of Korea. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Institute of Electronics Engineers of Korea | - |
dc.title | FineDedup: A fine-grained deduplication technique for extending lifetime of flash-based SSDs | - |
dc.type | Article | - |
dc.identifier.doi | 10.5573/JSTS.2017.17.4.648 | - |
dc.identifier.scopusid | 2-s2.0-85032784709 | - |
dc.identifier.bibliographicCitation | Journal of Semiconductor Technology and Science, v.17, no.5, pp.648 - 659 | - |
dc.identifier.kciid | ART002276380 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | NAND flash memory | - |
dc.subject.keywordAuthor | solid state disks | - |
dc.subject.keywordAuthor | data deduplication | - |
dc.subject.keywordAuthor | lifespan | - |
dc.subject.keywordAuthor | reliability | - |
dc.citation.endPage | 659 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 648 | - |
dc.citation.title | Journal of Semiconductor Technology and Science | - |
dc.citation.volume | 17 | - |
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