Formation of p-Silicon Wire by Electrochemical Etching Using Positive Photoresist as an Etch Mask in Organic Electrolyte

Abstract

In our previous work, we reported on silicon wire formation through the pit formed by metal-assisted chemical etching method as an alternative of a periodical etch pit with an inverted pyramid shape created by alkaline etching. We propose a further new process to fabricate silicon wires with a high aspect ratio not using the two-type etch pit in p-type silicon. The proposed process used a typical positive photoresist as an etching mask and a consecutive double-step current density method. The novel process is further simple and cost-effective, and decreases the number of total processes for electrochemical etching process. © 2011 The Electrochemical Society. [DOI: 10.1149/1.3594111] All rights reserved.