DGIST Scholar: Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2

Title: Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2

Citation: Eom, Tae-Kwang. (2009). Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2. Electrochemical and Solid State Letters, 12(11), D85–D88. doi: 10.1149/1.3207867

Author Keywords: atomic layer deposition ; metallic thin films ; nucleation ; ruthenium ; transmission electron microscopy

Keywords: Step Coverage ; Thin Films ; Titanium Nitride ; Toluene ; Transmission Electron ; Transmission Electron Microscopy ; Aspect Ratio ; Atomic Layer Deposition ; Contact Holes ; Cyclohexadienes ; Cyclopentadienyls ; DEPOSITION ; Electrode ; High Aspect Ratio ; Low Temperatures ; Metallic Thin Films ; Methylbenzenes ; Nucleation ; Olefins ; Organometallics ; OXIDATION ; Oxygen ; Ru Film ; Ru Thin Films ; Ruthenium ; Silicon Compounds

Abstract: Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1). © 2009 The Electrochemical Society.

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