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Inherent Lattice Distortion Engineering via Magnetic Field for High-Quality Strained MAPbI3 Perovskite Single Crystals
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dc.contributor.author Ogunleye, Abdulazeez M. -
dc.contributor.author Lee, Hakseon -
dc.contributor.author Adeshina, Mohammad Awwal -
dc.contributor.author Kim, Gunwoo -
dc.contributor.author Kim, Hyunmin -
dc.contributor.author Choi, Yoonmi -
dc.contributor.author Park, Jonghoo -
dc.date.accessioned 2024-12-20T21:10:17Z -
dc.date.available 2024-12-20T21:10:17Z -
dc.date.created 2024-12-08 -
dc.date.issued 2025-05 -
dc.identifier.issn 2196-7350 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/57328 -
dc.description.abstract Lattice distortion in perovskites (AMX3) significantly impacts their stability and power conversion efficiency, often in a trade-off. The inherent lattice distortion is predominantly influenced by the size, orientation, and composition of the A-site cations. Notably, organic–inorganic hybrid lead halide perovskites with organic cations like methylammonium (MA) and formamidinium (FA) demonstrate high power conversion efficiency but compromised stability. Here, a novel synthesis method is presented for high-quality strained MAPbI3 single crystals that offers not only enhanced optoelectronic properties but also improved thermal stability. This technique leverages the paramagnetic nature of the MA+ ion to manipulate lattice distortion. During the inverse temperature crystallization process, the dipole moment of the MA+ ion aligns with the direction of the external magnetic field. Correlating Fourier-transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) analysis demonstrates that this alignment, which induces compressive lattice strain, significantly enhances the carrier mobility from 68.1 to 487 cm2 V s−1, representing a sevenfold increase in hole mobility compared to the control sample. Additionally, it increases the carrier lifetime by 123%, from 23.458 to 52.364 ns, and improves thermal stability up to 230 °C. This findings reveal insights into the interplay between structural modifications and electronic properties, paving the way for tailored applications in photovoltaics, light-emitting devices, and beyond. © 2024 The Author(s). Advanced Materials Interfaces published by Wiley-VCH GmbH. -
dc.language English -
dc.publisher Wiley -
dc.title Inherent Lattice Distortion Engineering via Magnetic Field for High-Quality Strained MAPbI3 Perovskite Single Crystals -
dc.type Article -
dc.identifier.doi 10.1002/admi.202400781 -
dc.identifier.wosid 001361602300001 -
dc.identifier.scopusid 2-s2.0-85210028590 -
dc.identifier.bibliographicCitation Ogunleye, Abdulazeez M. (2025-05). Inherent Lattice Distortion Engineering via Magnetic Field for High-Quality Strained MAPbI3 Perovskite Single Crystals. Advanced Materials Interfaces, 12(9). doi: 10.1002/admi.202400781 -
dc.description.isOpenAccess TRUE -
dc.subject.keywordAuthor thermal stability -
dc.subject.keywordAuthor magnetic field-assisted ITC -
dc.subject.keywordAuthor octahedral distortion -
dc.subject.keywordAuthor perovskite singlecrystals -
dc.subject.keywordAuthor strained perovskite -
dc.subject.keywordPlus SOLAR-CELL -
dc.subject.keywordPlus CH3NH3PBI3 -
dc.subject.keywordPlus GROWTH -
dc.citation.number 9 -
dc.citation.title Advanced Materials Interfaces -
dc.citation.volume 12 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Materials Science -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Materials Science, Multidisciplinary -
dc.type.docType Article -
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