Title

Flexible Sol-Gel Processed ZrO2/SnO2 Thin Film Transistors Using Combustion Synthesis

Alternative Title

연소합성을 이용한 졸-겔 공정 기반의 유연 ZrO2/SnO2 박막 트랜지스터

DGIST Authors

Bongho Jang ; Hyuk-Jun Kwon ; Sangyoon Han

Advisor

권혁준

Co-Advisor(s)

Sangyoon Han

Issued Date

2024

Awarded Date

2024-08-01

Citation

Bongho Jang. (2024). Flexible Sol-Gel Processed ZrO2/SnO2 Thin Film Transistors Using Combustion Synthesis. doi: 10.22677/THESIS.200000798549

Type

Thesis

Description

Sol-gel process, Combustion synthesis, Thin film transistor, ZrO2, SnO2

Table Of Contents

Ⅰ. Introduction 1
1.1 Flexible electronics 3
1.2 Thin film transistors 6
1.2.1 Structure 7
1.2.2 Electrical characteristics 9
1.3 Metal oxide semiconductors 13
1.3.1 Orbital configuration 14
1.3.2 Oxygen vacancy and hydrogen impurities 15
1.4 SnO2 semiconductor 18
1.5 ZrO2 dielectric 22
1.6 Sol-gel process for metal oxides 25
1.6.1 Overview of sol-gel processing 25
1.6.2 Chemical reaction 27
1.6.3 Combustion synthesis 28
1.7 Carrier transport modeling 32
1.7.1 Multiple trapping and release model 33
1.7.2 Percolation conduction model 34
1.7.3 Compact power law model 36
1.8 References 36

Ⅱ. Combustion-Processed SnO2 Semiconductor 44
2.1 Experimental procedures 44
2.1.1 Preparation of combustion SnO2 precursor and TFT fabrication 44
2.1.2 Characterization of SnO2 films and TFTs 46
2.2 Characteristics of SnO2 films 46
2.3 Electrical characteristics of SnO2 TFTs 51
2.4 Charge transport modeling 58
2.5 Summary 60
2.6 References 60

Ⅲ. Combustion-Processed ZrO2 Dielectric 63
3.1 Experimental procedures 63
3.1.1 Preparation of combustion ZrO2 precursor 63
3.1.2 Fabrication of ZrO2 devices and characterization 64
3.2 Characteristics of ZrO2 films 66
3.3 Dielectric properties of ZrO2 devices 69
3.4 Summary 72
3.5 References 72

Ⅳ. Contact Properties of Combustion SnO2 Film 74
4.1 Cl doping effect through chloride-based combustion synthesis 74
4.2 Cl doping mechanism 76
4.3 Electrical characteristics of Au/SnO2/Au diodes 78
4.4 Schottky barrier modulation of SnO2 devices 80
4.5 Summary 85
4.6 References 85

Ⅴ. High Performance Flexible ZrO2/SnO2 Transistors 87
5.1 Combustion ZrO2/SnO2 TFTs 87
5.1.1 Fabrication of ZrO2/SnO2 TFTs 87
5.1.2 Electrical characteristics of ZrO2/SnO2 TFTs 88
5.2 Flexible ZrO2/SnO2 TFTs 92
5.2.1 Fabrication of flexible ZrO2/SnO2 TFTs 92
5.2.2 Electrical characteristics of flexible ZrO2/SnO2 TFTs 93
5.2.3 Mechanical properties of flexible ZrO2/SnO2 TFTs 97
5.3 Summary 98
5.4 References 99

Ⅵ. Conclusions and Future Work 102
6.1 Conclusions 102
6.2 Future work 103

Ⅶ. Appendix: Combustion Synthesis-Assisted Photopatterning 105
7.1 ZrO2 photopatterning and RRAM fabrication process 106
7.2 Characteristics of patterned ZrO2 films 108
7.3 Switching behaviors of ZrO2 RRAMs 111
7.4 Carrier transport mechanism 117
7.5 Summary 119
7.6 References 120

Ⅷ. 요약문 122

URI

http://hdl.handle.net/20.500.11750/57591
http://dgist.dcollection.net/common/orgView/200000798549

DOI

10.22677/THESIS.200000798549

Degree

Doctor

Department

Department of Electrical Engineering and Computer Science

Publisher

DGIST

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