WEB OF SCIENCE
SCOPUS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 권혁준 | - |
| dc.contributor.author | Geuntae Park | - |
| dc.date.accessioned | 2025-01-21T01:39:15Z | - |
| dc.date.available | 2025-01-21T01:39:15Z | - |
| dc.date.issued | 2024 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/57635 | - |
| dc.identifier.uri | http://dgist.dcollection.net/common/orgView/200000802734 | - |
| dc.description | Dual-annealing Activation, Contact resistivity, Silicon | - |
| dc.description.tableofcontents | List of Contents Abstract i List of contents ii List of tables iii List of figures vi Ⅰ. INTRODUCTION 1.1 Contact Resistance 1 1.1.1 Contact Resistance and Contact Resistivity 1 1.1.2 Carrier Transport at Metal-semiconductor 3 1.1.3 Ultra Low Contact Resistivity for Advanced CMOS Trasistor 5 1.1.4 Extraction of Contact Resistance 6 1.1.4.1 TLM and CTLM Structure 6 1.1.4.2 MR-CTLM Structure 8 1.2 Dual-annealing Dopants Activation 10 1.2.1 Annealing Method for Dopant Activation 10 1.2.2 Dual-annealing Activation Process for Shallow Junction 11 II. EXPERIMENTAL DETAIL 2.1 Fabrication & Structure 15 III. RESULT AND DISCUSSION 3.1 Phosphorus Activation in Silicon by Dual-annealing Process 22 3.2 Capping Layer Effect for Dual-annealing Activation 28 IV. CONCLUSION |
- |
| dc.format.extent | 42 | - |
| dc.language | eng | - |
| dc.publisher | DGIST | - |
| dc.title | Dual-Annealing Dopant Activation for Contact Resistance Reduction in Silicon | - |
| dc.title.alternative | 실리콘 접촉 저항 감소를 위한 이중 열처리 불순물 활성화 | - |
| dc.type | Thesis | - |
| dc.identifier.doi | 10.22677/THESIS.200000802734 | - |
| dc.description.degree | Master | - |
| dc.contributor.department | Department of Electrical Engineering and Computer Science | - |
| dc.identifier.bibliographicCitation | Geuntae Park. (2024). Dual-Annealing Dopant Activation for Contact Resistance Reduction in Silicon. doi: 10.22677/THESIS.200000802734 | - |
| dc.contributor.coadvisor | Jae-Eun Jang | - |
| dc.date.awarded | 2024-08-01 | - |
| dc.publisher.location | Daegu | - |
| dc.description.database | dCollection | - |
| dc.citation | XT.IM박17 202408 | - |
| dc.date.accepted | 2024-07-24 | - |
| dc.contributor.alternativeDepartment | 전기전자컴퓨터공학과 | - |
| dc.subject.keyword | Dual-annealing Activation, Contact resistivity, Silicon | - |
| dc.contributor.affiliatedAuthor | Geuntae Park | - |
| dc.contributor.affiliatedAuthor | Hyuk-Jun Kwon | - |
| dc.contributor.affiliatedAuthor | Jae-Eun Jang | - |
| dc.contributor.alternativeName | 박근태 | - |
| dc.contributor.alternativeName | Hyuk-Jun Kwon | - |
| dc.contributor.alternativeName | 장재은 | - |
| dc.rights.embargoReleaseDate | 2026-02-28 | - |
