Title

Tunable multi-quantum dots in InAs nanowires: Building Blocks for Su-Schrieffer-Heeger Topological Chains

Alternative Title

InAs 나노와이어의 조정 가능한 다중 양자점: Su-Schrieffer-Heeger 위상적 사슬을 위한 기초 구성 요소

DGIST Authors

Younghyun Kim ; Jungpil Seo ; Minkyung Jung

Advisor

서정필

Co-Advisor(s)

Minkyung Jung

Issued Date

2025

Awarded Date

2025-02-01

Citation

Younghyun Kim. (2025). Tunable multi-quantum dots in InAs nanowires: Building Blocks for Su-Schrieffer-Heeger Topological Chains. doi: 10.22677/THESIS.200000840960

Type

Thesis

Description

InAs nanowire, quantum dot

Table Of Contents

List of Contents
Abstract i
List of contents ii
List of figures V

Ⅰ. Theoretical Background
1.1 Su-Schrieffer-Heeger (SSH) model 3
1.2 Quantum dots 10
1.2.1 Indium Arsenide (InAs) nanowire single-electron transistor 10
1.2.2 Single quantum dot 11
1.2.3 Double quantum dot 14
1.2.4 Quadruple quantum dot 19
1.3 Superconducting coplanar waveguide (SCPW) resonators 21
1.3.1 Microwave theory of transmission lines 22
1.3.2 Superconducting microwave resonators 24
1.3.3 Norton equivalent circuit 26
1.3.4 Quality factors of the resonator 28
1.3.5 Transmission coefficient 30

II. Fabrication
2.1 InAs nanowire single-electron transistor 32
2.1.1 Nanowire transfer and etching process 32
2.1.2 DC Device Fabrication 34
2.2 Nb Superconducting coplanar waveguide (SCPW) resonator 35
2.2.1 Coplanar waveguide resonator geometry 35
2.2.2 RF Device Fabrication 36

III. Measurement Techniques
3.1 Initial Characterization and Sample Preparation 39
3.2 Measurement Schematic 41
3.3 Low Temperature Measurement Setup 42
3.4 He-3 Refrigeration System 44

IV. Experiments Results
4.1 Multi-quantum dot (DC Device) Results 46
4.1.1 Single quantum dots 46
4.1.2 Double quantum dots 49
4.1.3 Triple quantum dot 51
4.1.4 Quadruple quantum dot 53
4.2 SCPW resonator (RF Device) Results 59
4.2.1 Characteristics of the RF Device 59
4.2.2 Interaction between the transistor and the resonator 62


V. Summary and Conclusion 64


Bibliography 65


Appendix

Fabrication Details and Recipes

A1. Wafer Characteristics of DC device
A2. Photo pad Fabrication
A3. Wafer Characteristics of RF device
A4. Resonator fabrication for measurements
A5. InAs transistor fabrication (DC & RF device)
A6. Designing using K-Layout and Layout Editor

Pre-Cooldown Sample Preparation

B1. Wire bonding
B2. He-3 Sample Exchange Procedure (Unloading and loading Sample)


Korean Summary 80

URI

http://hdl.handle.net/20.500.11750/58061
http://dgist.dcollection.net/common/orgView/200000840960

DOI

10.22677/THESIS.200000840960

Degree

Master

Department

Department of Physics and Chemistry

Publisher

DGIST

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