Poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4 '-(N-(4-butylphenyl)))] (TFB) is a widely used hole transport material (HTM) in quantum dot light-emitting diodes (QLEDs). However, TFB-based solution-processed QLEDs face several challenges, including interlayer erosion, low hole mobility, shallow energy level of the highest occupied molecular orbital, and current leakage, which compromise the device efficiency and stability. To overcome these challenges, bromine and azide-based photothermally cross-linkable TFB derivatives, i.e., TFB-Br and TFB-N3, were designed and synthesized. TFB-N3 photothermally cross-linked under 254 nm ultraviolet light at 140 degrees C exhibited excellent solvent resistance within 30 s. Furthermore, the photothermally cross-linked TFB-N3 formed a compact three-dimensional (3D) network in QLEDs, enhancing hole transport and reducing the leakage current. Moreover, the HOMO energy level in photothermally cross-linked TFB-N3 decreased to -5.39 eV from that in TFB (-5.30 eV), reducing the hole transport energy barrier. Thus, the charge balance in the quantum dot (QD) layer was enhanced, and the current leakage was reduced, improving the overall QLED performance. The photothermally cross-linked TFB-N3-based QLEDs achieved a maximum external quantum efficiency of 19.53%, i.e., 61% higher than that of devices using TFB. Moreover, the T 90 lifetime of the photothermally cross-linked TFB-N3-based QLEDs was 4.49 times longer than that of TFB-based devices. The proposed strategy demonstrates that incorporating azide groups into polymeric HTMs can considerably enhance their hole transport and solvent resistance and reduce leakage current, improving QLED efficiency and stability.
