Zr3Mn3Sn4Ga: A new hetero-kagome bilayer antiferromagnet

Abstract

We report the magnetic and electrical transport properties of single-crystalline Zr3Mn3Sn4Ga, featuring two distinct kagome lattices: a non-magnetic breathing Zr3Sn4 lattice and a magnetic intact Mn3Ga lattice. The material undergoes an antiferromagnetic phase transition at TN = 87 K, with neutron diffraction confirming commensurate ordering characterized by k = (1/3,1/3,0). Transport measurements show metallic behavior, a resistivity anomaly near TN​, and 12 % magnetoresistance at 2 K under 9 T Deviations from the conventional second-order power law, along with negative magnetoresistance and nonlinear Hall slope variations near TN​, suggest strong magneto-electronic coupling. Resonant photoemission spectroscopy identifies Zr 4d and Mn 3d orbitals as dominant contributors to the valence band, linking the material's unique electronic properties to its kagome layers. Zr3Mn3Sn4Ga offers a valuable platform to study interactions between magnetism and topological electronic bands in hetero-kagome systems using the co-existence of magnetic and non-magnetic kagome layers and its tunable electronic structure. © 2025 Acta Materialia Inc.