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Department of Physics and Chemistry
Lab for NanoBio-Materials & SpinTronics
1. Journal Articles
Shape anisotropy-induced local incoherent magnetization: Implications for magnetic sensor tuning
Kim, Jinwoo
;
Nayak, Bibhutibhusan
;
Soldatov, I.V.
;
Schäfer, R.
;
Lim, Byeonghwa
;
Kim, CheolGi
Department of Physics and Chemistry
Lab for NanoBio-Materials & SpinTronics
1. Journal Articles
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Title
Shape anisotropy-induced local incoherent magnetization: Implications for magnetic sensor tuning
Issued Date
2025-06
Citation
Journal of Science: Advanced Materials and Devices, v.10, no.2
Type
Article
Author Keywords
Demagnetizing field
;
Magnetization
;
Magnetoresistive sensor
;
Planar Hall effect
;
Shape anisotropy
ISSN
2468-2284
Abstract
The geometry of magnetoresistive sensors based on thin magnetic films plays a crucial role in shaping their magnetization behavior and overall performance. This study investigates Wheatstone bridge sensors made with NiFe single-layer films (thickness: 10–40 nm; width: 20–60 μm; length: 500 μm) to analyze the impact of shape anisotropy on magnetization distribution. We observed domain images and sensor signals by applying a magnetic field with a constant direction and strength while varying the strength of a second magnetic field applied perpendicularly to the first. Wide-field Kerr microscopy revealed that magnetization reversal occurs locally and incoherently, with the degree of incoherence increasing in geometries with stronger demagnetizing fields. The demagnetizing field in rectangular-shaped thin films was calculated, revealing a sharp increase in field strength 3–4 μm from the bridge element edge when magnetized in the short-length direction, which results in localized magnetization behavior. The sensor signals were calculated and measured for various width-to-length ratios of the bridge elements and external magnetic field strengths. Results show that variations in sensor geometry and external magnetic fields can influence peak-to-peak voltage by up to 41 % and make significant hysteresis in the sensor signal. These findings provide valuable insights into optimizing the design and performance of magnetoresistive sensors for advanced applications. © 2025 Vietnam National University, Hanoi
URI
https://scholar.dgist.ac.kr/handle/20.500.11750/58381
DOI
10.1016/j.jsamd.2025.100893
Publisher
Elsevier
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