WEB OF SCIENCE
SCOPUS
Metadata Downloads
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김대희 | - |
| dc.contributor.author | 김홍수 | - |
| dc.contributor.author | 황윤주 | - |
| dc.contributor.author | 박영호 | - |
| dc.contributor.author | 인수일 | - |
| dc.date.accessioned | 2025-07-24T17:10:13Z | - |
| dc.date.available | 2025-07-24T17:10:13Z | - |
| dc.identifier.uri | https://scholar.dgist.ac.kr/handle/20.500.11750/58703 | - |
| dc.description.abstract | In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer. | - |
| dc.title | Semiconductor memory and method of manufacturing the same | - |
| dc.title.alternative | Carbon electrode for dye-sensitized betavoltaic battery, Betavoltaic battery using the same and manufacturing method thereof | - |
| dc.type | Patent | - |
| dc.identifier.bibliographicCitation | 김대희. Semiconductor memory and method of manufacturing the same. | - |
| dc.publisher.country | UN | - |
| dc.identifier.patentApplicationNumber | 07646496 | - |
| dc.date.application | 1991-01-28 | - |
| dc.identifier.patentRegistrationNumber | 05187566 | - |
| dc.date.registration | 1993-02-16 | - |
| dc.contributor.assignee | Kabushiki Kaisha Toshiba | - |
| dc.type.iprs | 특허 | - |
