A method for selectively doping a single two-dimensional material according to an embodiment of the present disclosure may comprise the steps of: designating a first region to be subjected to N-type doping and a second region to be subjected to P-type doping in a nanosheet of a two-dimensional material; exposing the first region when the N-type doping is performed and the second region when the P-type doping is performed; and successively performing selective doping on the two-dimensional material by adding a first dopant material for the N-type doping to the exposed first region or adding a second dopant material for the P-type doping to the exposed second region.