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  Department of Electrical Engineering and Computer Science Theses Master

Cr–WSe₂ Alloy for Contact Optimization of P-Type WSe₂ FETs

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dc.contributor.advisor 권혁준 -
dc.contributor.author Young-Jun Sim -
dc.date.accessioned 2026-01-23T10:56:33Z -
dc.date.available 2026-01-23T10:56:33Z -
dc.date.issued 2026 -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/59710 -
dc.identifier.uri http://dgist.dcollection.net/common/orgView/200000944459 -
dc.description 2D materials, WSe2, Contact resistance, Schottky barrier height, Alloy interface -
dc.description.tableofcontents List of Contents
Abstract i
List of contents ii
List of tables iv
List of figures v

Ⅰ. INTRONDUCTION
1.1 Device Scaling 1
1.1.1 2D materials for Device Scaling 2
1.1.2 Tungsten Diselenide (WSe2) for P-type Transistors 6
1.2 Contact Resistance 8
1.2.1 Fermi-Level Pinning 10
1.2.2 van der Waals Contact for Fermi Level Pinning Suppression 12

Ⅱ. EXPERIMENTAL DETAILS
2.1 Device Fabrication 14
2.2 Fabrication Issues 15
2.3 W1-xCrxSe2 Alloy Formation 17
2.4 Characterizations of WSe2 FETs 17
2.5 Gate Leakage of WSe2 FETs 18

Ⅲ. RESULTS AND DISCUSSIONS
3.1 Laser Annealing for W1-xCrxSe2 Alloy Formation 19
3.1.1 Process Overview 19
3.1.2 Electrical Characteristics of Laser Annealed Devices 20
3.2 Rapid Thermal Processing for W1-xCrxSe2 Alloy Formation 24
3.2.1 Process Conditions 24
3.2.2 Chemical State Analysis of W1-xCrxSe2 26
3.2.3 Energy Band Structure of W1-xCrxSe2 Alloy Interface 29
3.2.4 Extraction of Schottky Barrier Height 32
3.2.5 Extraction of Contact Resistance 34
3.2.6 Electrical Properties of W1-xCrxSe2 Alloy Interface Contact 37
3.2.7 Comparison with Other Metal 41
3.2.8 Stability of W1-xCrxSe2 Alloy Interface 43
3.2.9 Comparison with Previous Studies 44

Ⅳ. CONCLUSION 46

REFERENCE 48		 -
dc.format.extent 53 -
dc.language eng -
dc.publisher DGIST -
dc.title Cr–WSe₂ Alloy for Contact Optimization of P-Type WSe₂ FETs -
dc.title.alternative P-형 WSe2 전계 효과 트랜지스터 접촉 저항 최소화를 위한 Cr-WSe2 합금화 -
dc.type Thesis -
dc.identifier.doi 10.22677/THESIS.200000944459 -
dc.description.degree Master -
dc.contributor.department Department of Electrical Engineering and Computer Science -
dc.contributor.coadvisor Byeongmoon Lee -
dc.date.awarded 2026-02-01 -
dc.publisher.location Daegu -
dc.description.database dCollection -
dc.citation XT.IM 심64 202602 -
dc.date.accepted 2026-01-19 -
dc.contributor.alternativeDepartment 전기전자컴퓨터공학과 -
dc.subject.keyword 2D materials, WSe2, Contact resistance, Schottky barrier height, Alloy interface -
dc.contributor.affiliatedAuthor Young-Jun Sim -
dc.contributor.affiliatedAuthor Hyuk-Jun Kwon -
dc.contributor.affiliatedAuthor Byeongmoon Lee -
dc.contributor.alternativeName 심영준 -
dc.contributor.alternativeName Hyuk-Jun Kwon -
dc.contributor.alternativeName 이병문 -
dc.rights.embargoReleaseDate 2027-02-28 -
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