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Quantitative Analysis of Endurance-dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Hyojin | - |
| dc.contributor.author | Kim, Haesung | - |
| dc.contributor.author | Han, Changhyeon | - |
| dc.contributor.author | Lee, Yoon Jung | - |
| dc.contributor.author | Choi, Sung-Jin | - |
| dc.contributor.author | Kim, Dae Hwan | - |
| dc.contributor.author | Kim, Dong Myong | - |
| dc.contributor.author | Kwon, Daewoong | - |
| dc.contributor.author | Bae, Jong-Ho | - |
| dc.date.accessioned | 2026-02-10T21:40:20Z | - |
| dc.date.available | 2026-02-10T21:40:20Z | - |
| dc.date.created | 2025-11-03 | - |
| dc.date.issued | 2025-06-08 | - |
| dc.identifier.isbn | 9784863488168 | - |
| dc.identifier.issn | 2161-4644 | - |
| dc.identifier.uri | https://scholar.dgist.ac.kr/handle/20.500.11750/60054 | - |
| dc.description.abstract | We present a quantitative reliability analysis of HZO/SiO2-based MFIS FeFETs under varying T and P/E cycles. Using PUND and transient response analysis, key parameters (2Pr, VC, SVQBo, τB) were extracted to identify degradation mechanisms. Results highlight polarization loss and domain pinning, with charge trapping behavior. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.relation.ispartof | 2025 SILICON NANOELECTRONICS WORKSHOP, SNW | - |
| dc.title | Quantitative Analysis of Endurance-dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects | - |
| dc.type | Conference Paper | - |
| dc.identifier.doi | 10.23919/SNW65111.2025.11097276 | - |
| dc.identifier.wosid | 001548681500038 | - |
| dc.identifier.scopusid | 2-s2.0-105013616877 | - |
| dc.identifier.bibliographicCitation | 2025 Silicon Nanoelectronics Workshop, SNW 2025, pp.74 - 75 | - |
| dc.identifier.url | https://pub.confit.atlas.jp/en/event/snw2025/presentation/6-20 | - |
| dc.citation.conferenceDate | 2025-06-08 | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Kyoto | - |
| dc.citation.endPage | 75 | - |
| dc.citation.startPage | 74 | - |
| dc.citation.title | 2025 Silicon Nanoelectronics Workshop, SNW 2025 | - |
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