Quantitative Analysis of Endurance-dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects

Abstract

We present a quantitative reliability analysis of HZO/SiO2-based MFIS FeFETs under varying T and P/E cycles. Using PUND and transient response analysis, key parameters (2Pr, VC, SVQBo, τB) were extracted to identify degradation mechanisms. Results highlight polarization loss and domain pinning, with charge trapping behavior.