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dc.contributor.author Kwon, Ga Yeon -
dc.contributor.author 유도헌 -
dc.contributor.author Byun, Jong Chan -
dc.contributor.author Jo, Jea Woong -
dc.contributor.author Choi, Jongmin -
dc.contributor.author Choi, Min-Jae -
dc.date.accessioned 2026-11-09T13:40:15Z -
dc.date.available 2026-11-09T13:40:15Z -
dc.date.created 2026-10-22 -
dc.date.issued 2026-10 -
dc.identifier.issn 2050-7488 -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/61116 -
dc.description.abstract Ag-In-Te-based nanocrystals are promising non-toxic emitters for near-infrared-II (NIR-II) photoluminescence (PL), but their efficiency is limited by poor surface passivation and the resulting nonradiative recombination. Here, we report an intermediate-mediated synthesis of anion-tuned AgIn(S,Te)2 nanorods. Ag-In-Sx intermediates serve as reactive precursors, enabling S/Te anion tuning during Te-mediated nanorod growth. The photoluminescence quantum yield (PLQY) tracks the residual sulfide retained within the nanorods and is maximized not under the most Te-rich condition, but at an intermediate composition of 66 at% Te and 34 at% S. The retained sulfide is proposed to form local wide-bandgap Ag-In-S-like environments that may contribute to the suppression of nonradiative recombination while preserving NIR-II emission. The optimized pristine nanorods reach a PLQY of 40.2%, which increases to 62.0% after ZnS surface passivation. The AgIn(S,Te)2@ZnS nanorods were further integrated as the photoactive layer in a photodiode device, showing a distinct NIR photoresponse at wavelengths above 800 nm. These results establish Ag-In-Sx intermediate chemistry as an effective route to control anion composition and enhance NIR-II PL in Te-based nanocrystals. -
dc.language English -
dc.publisher ROYAL SOC CHEMISTRY -
dc.title Intermediate-mediated anion tuning of AgIn(S,Te)2 nanorods for highly efficient NIR-II photoluminescence -
dc.type Article -
dc.identifier.doi 10.1039/d6ta04603g -
dc.identifier.wosid 001895665500001 -
dc.identifier.scopusid 2-s2.0-105052635162 -
dc.identifier.bibliographicCitation JOURNAL OF MATERIALS CHEMISTRY A, v.14, no.64, pp.44360 - 44368 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus BAND-EDGE PHOTOLUMINESCENCE -
dc.subject.keywordPlus QUANTUM DOTS -
dc.subject.keywordPlus SEMICONDUCTOR NANOCRYSTALS -
dc.citation.endPage 44368 -
dc.citation.number 64 -
dc.citation.startPage 44360 -
dc.citation.title JOURNAL OF MATERIALS CHEMISTRY A -
dc.citation.volume 14 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Energy & Fuels; Materials Science -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Energy & Fuels; Materials Science, Multidisciplinary -
dc.type.docType Article -
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최종민
Choi, Jongmin최종민

Department of Energy Science and Engineering

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