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Division of Nanotechnology
1. Journal Articles
Thermal Annealing Effects on the Interfacial Dzyaloshinskii-Moriya Interaction Energy Density and Perpendicular Magnetic Anisotropy
Cho, Jaehun
;
Kim, Nam Hui
;
Jeong, Jin Yong
;
Han, Dong-Soo
;
Swagten, Henk J. M.
;
Kim, June Seo
;
You, Chun Yeol
Division of Nanotechnology
1. Journal Articles
Department of Physics and Chemistry
Spin Phenomena for Information Nano-devices(SPIN) Lab
1. Journal Articles
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Title
Thermal Annealing Effects on the Interfacial Dzyaloshinskii-Moriya Interaction Energy Density and Perpendicular Magnetic Anisotropy
DGIST Authors
Cho, Jaehun
;
Kim, Nam Hui
;
Jeong, Jin Yong
;
Han, Dong-Soo
;
Swagten, Henk J. M.
;
Kim, June Seo
;
You, Chun Yeol
Issued Date
2018-06
Citation
Cho, Jaehun. (2018-06). Thermal Annealing Effects on the Interfacial Dzyaloshinskii-Moriya Interaction Energy Density and Perpendicular Magnetic Anisotropy. doi: 10.1109/TMAG.2018.2814569
Type
Article
Article Type
Article; Proceedings Paper
Author Keywords
Brillouin light scattering (BLS)
;
interfacial Dzyaloshinskii-Moriya interaction (iDMI)
;
perpendicular magnetic anisotropy (PMA)
Keywords
MOTION
;
FILMS
ISSN
0018-9464
Abstract
We investigate the interfacial Dzyaloshinskii-Moriya interaction (iDMI) and the perpendicular magnetic anisotropy (PMA) in the annealed inversion symmetry breaking structures (Pt/Co (CoFeB)/AlOx and Ta/CoFeB/AlOx) by Brillouin light scattering. The iDMI energy density of Pt/Co and Pt/CoFeB samples decreases while increasing annealing temperature, but the iDMI energy density of Ta/CoFeB sample slightly increases by increasing annealing temperature. By applying the thermal annealing process, PMA energies slightly increase at the Pt/Co interface; however, Pt/CoFeB, (Ta/CoFeB) structures are dramatically decreased (increased) by the annealing process. The effects of the annealing show complicate variation for iDMI and PMA for each structure; however, we find overall weak correlations between iDMI and PMA despite different materials and annealing process. © 1965-2012 IEEE.
URI
http://hdl.handle.net/20.500.11750/6203
DOI
10.1109/TMAG.2018.2814569
Publisher
Institute of Electrical and Electronics Engineers
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Kim, June-Seo
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