Identifying Structural Defects During Driving Electronic Devices
- Title
- Identifying Structural Defects During Driving Electronic Devices
- DGIST Authors
- Lee, Hyeon Jun
- Issued Date
- 2018-01-11
- Type
- News
- Abstract
- DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world
- URI
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http://hdl.handle.net/20.500.11750/5029
http://hdl.handle.net/20.500.11750/5620
http://hdl.handle.net/20.500.11750/6271
https://en.dgist.ac.kr/site/dgist_eng/menu/508.do?configNo=96&cmd=read&contentNo=36515&pageIndex=1&recordPerPage=10&month=0&condition=&keyword=
https://phys.org/news/2018-01-defects-electronic-devices.html
- Related Researcher
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-
Lee, Hyeon-Jun
- Research Interests 산화물반도체; Oxide semicondcutor; IGZO; memristor; 멤리스터; 차세대메모리; next-generation memory; 뇌모사; neuromorphic; 반도체 소자; Semiconductor device; 소자 수명 평가; device degradation; 소자 결함 분석; device fatigue; 반도체 열분석; Semiconductor thermal analysis; 미세 발열 측정; thermal measurement; 인공지능 소자; AI device; 인지연산 소자 및 시스템; recognition system; transistor analysis & design; 트랜지스터 분석 및 디자인; 트랜지스터 제작 및 측정; transistor fabrication and measurement
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- Appears in Collections:
- Intelligent Devices and Systems Research Group 4. News
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