Identifying Structural Defects During Driving Electronic Devices
- Title
- Identifying Structural Defects During Driving Electronic Devices
- DGIST Authors
- Lee, Hyeon Jun
- Issued Date
- 2018-01-11
- Type
- News
- Abstract
- DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world
- URI
-
http://hdl.handle.net/20.500.11750/5029
http://hdl.handle.net/20.500.11750/5620
http://hdl.handle.net/20.500.11750/6271
https://en.dgist.ac.kr/site/dgist_eng/menu/508.do?configNo=96&cmd=read&contentNo=36515&pageIndex=1&recordPerPage=10&month=0&condition=&keyword=
https://phys.org/news/2018-01-defects-electronic-devices.html
- Related Researcher
-
-
Lee, Hyeon-Jun 나노기술연구부
- Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
-
- Appears in Collections:
- Intelligent Devices and Systems Research Group 4. News
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