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dc.date.accessioned2018-05-02T02:26:30Z-
dc.date.available2018-05-02T02:26:30Z-
dc.date.issued2018-01-11-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/5029-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/5620-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/6271-
dc.identifier.urihttps://en.dgist.ac.kr/site/dgist_eng/menu/508.do?configNo=96&cmd=read&contentNo=36515&pageIndex=1&recordPerPage=10&month=0&condition=&keyword=-
dc.identifier.urihttps://phys.org/news/2018-01-defects-electronic-devices.html-
dc.description.abstractDGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the worlden_US
dc.titleIdentifying Structural Defects During Driving Electronic Devicesen_US
dc.typeNewsen_US
dc.contributor.localauthorLee, Hyeon Jun-


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