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| DC Field | Value | Language |
|---|---|---|
| dc.date.accessioned | 2018-05-02T02:26:30Z | - |
| dc.date.available | 2018-05-02T02:26:30Z | - |
| dc.date.issued | 2018-01-11 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/5029 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/5620 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/6271 | - |
| dc.identifier.uri | https://en.dgist.ac.kr/site/dgist_eng/menu/508.do?configNo=96&cmd=read&contentNo=36515&pageIndex=1&recordPerPage=10&month=0&condition=&keyword= | - |
| dc.identifier.uri | https://phys.org/news/2018-01-defects-electronic-devices.html | - |
| dc.description.abstract | DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world | en_US |
| dc.title | Identifying Structural Defects During Driving Electronic Devices | en_US |
| dc.type | News | en_US |
| dc.identifier.bibliographicCitation | - | |
| dc.contributor.affiliatedAuthor | Lee, Hyeon Jun | - |
