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(Legacy) Intelligent Devices and Systems Research Group
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Identifying Structural Defects During Driving Electronic Devices
(Legacy) Intelligent Devices and Systems Research Group
4. News
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Title
Identifying Structural Defects During Driving Electronic Devices
DGIST Authors
Lee, Hyeon Jun
Issued Date
2018-01-11
Citation
Type
News
Abstract
DGIST research team discovered the blocking phenomenon of electrons generated during high-speed driving of oxide semiconductors and proved its causes for the first time in the world
URI
http://hdl.handle.net/20.500.11750/5029
http://hdl.handle.net/20.500.11750/5620
http://hdl.handle.net/20.500.11750/6271
https://en.dgist.ac.kr/site/dgist_eng/menu/508.do?configNo=96&cmd=read&contentNo=36515&pageIndex=1&recordPerPage=10&month=0&condition=&keyword=
https://phys.org/news/2018-01-defects-electronic-devices.html
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