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Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures

Title
Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures
Authors
Talantsev, ArtemAly, Amir Ibrahim ElzawawyKim, CheolGi
DGIST Authors
Kim, CheolGi
Issue Date
2018-05
Citation
Journal of Applied Physics, 123(17), 173902
Type
Article
Article Type
Article
Keywords
SPACER LAYERANISOTROPIC MAGNETORESISTANCEINTERFACIAL MODIFICATIONTHIN-FILMSFIELDTEMPERATURESENSITIVITYSYSTEMSENSORDEPENDENCE
ISSN
0021-8979
Abstract
Thin films and cross junctions, based on NiFe/Au/IrMn structures, were grown on Ta and NiFeCr seed layers by magnetron sputtering. The effects of substitution of Ta with NiFeCr in seed and capping layers on an exchange bias field are studied. A threefold improvement of the exchange bias value in the structures, grown with NiFeCr seed and capping layers, is demonstrated. The reasons for this effect are discussed. Formation of clusters in the NiFeCr capping layer is proved by atomic force microscopy technique. Ta replacement on NiFeCr in the capping layer results in the enhancement of magnetoresistive response and a reduction of noise. © 2018 Author(s).
URI
http://hdl.handle.net/20.500.11750/6412
DOI
10.1063/1.5023888
Publisher
American Institute of Physics Inc.
Related Researcher
  • Author Kim, CheolGi Lab for NanoBio-MatErials & SpinTronics(nBEST)
  • Research Interests Magnetic Materials and Spintronics; Converging Technology of Nanomaterials and Biomaterials; Bio-NEMS;MEMS
Files:
There are no files associated with this item.
Collection:
Department of Emerging Materials ScienceLab for NanoBio-Materials & SpinTronics(nBEST)1. Journal Articles


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