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Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition

Title
Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition
Authors
Kim, Byeong-HyeokKim, Min-WooKang, Jang WonChoi, Yong-SeokKim, Bong-JoongPark, Seong-Ju
DGIST Authors
Kim, Byeong-Hyeok; Kim, Min-Woo; Kang, Jang Won; Choi, Yong-Seok; Kim, Bong-Joong; Park, Seong-Ju
Issue Date
2018-08
Citation
Journal of Alloys and Compounds, 757, 98-104
Type
Article
Article Type
Article
Author Keywords
Oxide materialsSemiconductorThin filmsElectronic propertiesGrain boundary
Keywords
P-TYPE CONDUCTIVITYZNO THIN-FILMSLAYERBOUNDARIESTRANSPORTEMISSIONGA
ISSN
0925-8388
Abstract
We report on the electrical properties of columnar Sb-doped MgZnO (MgZnO:Sb) films grown by metalorganic chemical vapor deposition (MOCVD). Hall effect and C–V measurements showed different carrier types and concentrations in the columnar MgZnO:Sb film. The Hall effect measurements showed both n-type and p-type conductivity randomly across repeated measurements. In contrast, the C–V measurements showed only p-type conductivity across repeated measurements, and the hole concentration was estimated to be 1.46 × 1019 cm−3. We show that carrier type and concentration in columnar MgZnO:Sb films should be measured vertically rather than laterally due to the large defect scattering at the grain boundaries of the columnar structures. © 2018 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/6413
DOI
10.1016/j.jallcom.2018.05.023
Publisher
Elsevier BV
Files:
There are no files associated with this item.
Collection:
ETC1. Journal Articles


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