Cited 1 time in webofscience Cited 1 time in scopus

Twin-induced phase transition from beta-Ga2O3 to alpha-Ga2O3 in Ga2O3 thin films

Title
Twin-induced phase transition from beta-Ga2O3 to alpha-Ga2O3 in Ga2O3 thin films
Authors
Choi, ByeongdaeAllabergenov, BunyodLyu, Hong-KunLee, Seong Eui
DGIST Authors
Choi, ByeongdaeLyu, Hong-Kun
Issue Date
2018-06
Citation
Applied Physics Express, 11(6)
Type
Article
Article Type
Article
Keywords
GALLIUM OXIDEALPHABETA
ISSN
1882-0778
Abstract
We deposited a 300-nm-thick Ga2O3 thin film on an amorphous SiO2/Si substrate via pulsed laser deposition. X-ray diffraction patterns revealed the formation of β-Ga2O3 phase at a substrate temperature of 700 °C. X-ray photoelectron spectra indicated that the degree of oxidation increased after annealing at 700 °C. Further annealings at higher temperatures led to a transition of the β-Ga2O3 phase to the α-Ga2O3 phase; this transition was caused by the twin structure formed during the crystallinity improvement process. In addition, we discuss the mechanism of the transition from the β phase to the α phase in the β-Ga2O3 thin films. © 2018 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/6604
DOI
10.7567/APEX.11.061105
Publisher
Japan Soc of Applied Physics
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


qrcode mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE