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Defect Restoration of Low-Temperature Sol-Gel-Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes

Title
Defect Restoration of Low-Temperature Sol-Gel-Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes
Authors
Kim, KyounghwanSim, Kyu MinYoon, SeongwonJang, Min SuChung, Dae Sung
DGIST Authors
Chung, Dae Sung
Issue Date
2018-07
Citation
Advanced Functional Materials, 28(30)
Type
Article
Article Type
Article
Keywords
defect restorationhigh detectivitypolymeric Schottky photodiodessulfur dopingZnO electron selective layersChemical stabilityDefectsII-VI semiconductorsOxygen vacanciesPhotodiodesRestorationSchottky barrier diodesSol-gel processSol-gelsSulfurTemperatureZinc oxideCharged oxygen vacanciesChemical robustnessDetectivityNoise equivalent powerOrganic photodiodesSchottky photodiodesSelective layersSulfur dopingPolymers
ISSN
1616-301X
Abstract
This study shows that the deep-level defect states in sol-gel-derived ZnO can be efficiently restored by facile sulfur doping chemistry, wherein the +2 charged oxygen vacancies are filled with the S2- ions brought by thiocyanate. By fabricating a solution-processed polymeric Schottky diode with ITO/ZnO as the cathode, the synergetic effects of such defect-restored ZnO electron selective layers are demonstrated. The decreased chemical defects and thus reduced mid-gap states enable to not only enlarge the effective built-in potential, which can expand the width of the depletion region, but also increase the Schottky energy barrier, which can reduce undesired dark-current injection. As a result, the demonstrated simple-structure blue-selective polymeric Schottky photodiode renders near-ideal diode operation with an ideality factor of 1.18, a noise equivalent power of 1.25 × 10-14 W Hz-1/2, and a high peak detectivity of 2.4 × 1013 Jones. In addition, the chemical robustness of sulfur-doped ZnO enables exceptional device stability against air exposure as well as device-to-device reproducibility. Therefore, this work opens the possibility of utilizing low-temperature sol-gel-derived ZnO in realizing high-performance, stable, and reliable organic photodiodes that could be employed in the design of practical image sensors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI
http://hdl.handle.net/20.500.11750/6610
DOI
10.1002/adfm.201802582
Publisher
Wiley-VCH Verlag
Related Researcher
Files:
There are no files associated with this item.
Collection:
Department of Energy Science and EngineeringPolymer Energy Materials Lab1. Journal Articles


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