Cited 10 time in
Cited 13 time in
Defect Restoration of Low-Temperature Sol-Gel-Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes
- Defect Restoration of Low-Temperature Sol-Gel-Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes
- Kim, Kyounghwan; Sim, Kyu Min; Yoon, Seongwon; Jang, Min Su; Chung, Dae Sung
- DGIST Authors
- Chung, Dae Sung
- Issue Date
- Advanced Functional Materials, 28(30)
- Article Type
- defect restoration; high detectivity; polymeric Schottky photodiodes; sulfur doping; ZnO electron selective layers; Chemical stability; Defects; II-VI semiconductors; Oxygen vacancies; Photodiodes; Restoration; Schottky barrier diodes; Sol-gel process; Sol-gels; Sulfur; Temperature; Zinc oxide; Charged oxygen vacancies; Chemical robustness; Detectivity; Noise equivalent power; Organic photodiodes; Schottky photodiodes; Selective layers; Sulfur doping; Polymers
- This study shows that the deep-level defect states in sol-gel-derived ZnO can be efficiently restored by facile sulfur doping chemistry, wherein the +2 charged oxygen vacancies are filled with the S2- ions brought by thiocyanate. By fabricating a solution-processed polymeric Schottky diode with ITO/ZnO as the cathode, the synergetic effects of such defect-restored ZnO electron selective layers are demonstrated. The decreased chemical defects and thus reduced mid-gap states enable to not only enlarge the effective built-in potential, which can expand the width of the depletion region, but also increase the Schottky energy barrier, which can reduce undesired dark-current injection. As a result, the demonstrated simple-structure blue-selective polymeric Schottky photodiode renders near-ideal diode operation with an ideality factor of 1.18, a noise equivalent power of 1.25 × 10-14 W Hz-1/2, and a high peak detectivity of 2.4 × 1013 Jones. In addition, the chemical robustness of sulfur-doped ZnO enables exceptional device stability against air exposure as well as device-to-device reproducibility. Therefore, this work opens the possibility of utilizing low-temperature sol-gel-derived ZnO in realizing high-performance, stable, and reliable organic photodiodes that could be employed in the design of practical image sensors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Wiley-VCH Verlag
- Related Researcher
There are no files associated with this item.
- Department of Energy Science and EngineeringPolymer Energy Materials Lab1. Journal Articles
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.