Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kyounghwan | - |
dc.contributor.author | Sim, Kyu Min | - |
dc.contributor.author | Yoon, Seongwon | - |
dc.contributor.author | Jang, Min Su | - |
dc.contributor.author | Chung, Dae Sung | - |
dc.date.accessioned | 2018-06-18T00:02:15Z | - |
dc.date.available | 2018-06-18T00:02:15Z | - |
dc.date.created | 2018-06-15 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/6610 | - |
dc.description.abstract | This study shows that the deep-level defect states in sol-gel-derived ZnO can be efficiently restored by facile sulfur doping chemistry, wherein the +2 charged oxygen vacancies are filled with the S2- ions brought by thiocyanate. By fabricating a solution-processed polymeric Schottky diode with ITO/ZnO as the cathode, the synergetic effects of such defect-restored ZnO electron selective layers are demonstrated. The decreased chemical defects and thus reduced mid-gap states enable to not only enlarge the effective built-in potential, which can expand the width of the depletion region, but also increase the Schottky energy barrier, which can reduce undesired dark-current injection. As a result, the demonstrated simple-structure blue-selective polymeric Schottky photodiode renders near-ideal diode operation with an ideality factor of 1.18, a noise equivalent power of 1.25 × 10-14 W Hz-1/2, and a high peak detectivity of 2.4 × 1013 Jones. In addition, the chemical robustness of sulfur-doped ZnO enables exceptional device stability against air exposure as well as device-to-device reproducibility. Therefore, this work opens the possibility of utilizing low-temperature sol-gel-derived ZnO in realizing high-performance, stable, and reliable organic photodiodes that could be employed in the design of practical image sensors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language | English | - |
dc.publisher | Wiley | - |
dc.title | Defect Restoration of Low-Temperature Sol-Gel-Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adfm.201802582 | - |
dc.identifier.wosid | 000439738200030 | - |
dc.identifier.scopusid | 2-s2.0-85047759894 | - |
dc.identifier.bibliographicCitation | Advanced Functional Materials, v.28, no.30 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | high detectivity | - |
dc.subject.keywordAuthor | polymeric Schottky photodiodes | - |
dc.subject.keywordAuthor | sulfur doping | - |
dc.subject.keywordAuthor | ZnO electron selective layers | - |
dc.subject.keywordAuthor | defect restoration | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | ENHANCED PERFORMANCE | - |
dc.subject.keywordPlus | ORGANIC PHOTODIODES | - |
dc.subject.keywordPlus | AQUEOUS-SOLUTION | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DISTRIBUTIONS | - |
dc.identifier.url | https://onlinelibrary.wiley.com/cms/asset/1a8acf70-4ae2-4bec-90d4-048c9d137db1/adfm201870210-gra-0001-m.jpg | - |
dc.citation.number | 30 | - |
dc.citation.title | Advanced Functional Materials | - |
dc.citation.volume | 28 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.type.docType | Article | - |
There are no files associated with this item.