Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Gee yeong | - |
dc.contributor.author | Kim, Juran | - |
dc.contributor.author | Jo, William | - |
dc.contributor.author | Son, Dae-Ho | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.contributor.author | Kang, Jin-Kyu | - |
dc.date.accessioned | 2018-06-22T13:15:40Z | - |
dc.date.available | 2018-06-22T13:15:40Z | - |
dc.date.created | 2018-03-29 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 2196-5404 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/6622 | - |
dc.description.abstract | CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device. © 2014, Kim et al.; licensee Springer. | - |
dc.language | English | - |
dc.publisher | Springer | Korea Nano Technology Research Society | - |
dc.title | Nanoscale investigation of surface potential distribution of Cu2ZnSn(S,Se)4 thin films grown with additional NaF layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/s40580-014-0027-1 | - |
dc.identifier.scopusid | 2-s2.0-85098804574 | - |
dc.identifier.bibliographicCitation | Nano Convergence, v.1, no.1, pp.1 - 8 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordAuthor | Cu2ZnSn(S,Se)4 | - |
dc.subject.keywordAuthor | Na | - |
dc.subject.keywordAuthor | Grain boundary | - |
dc.subject.keywordAuthor | Surface potential | - |
dc.subject.keywordAuthor | Kelvin probe force microscopy | - |
dc.citation.endPage | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | Nano Convergence | - |
dc.citation.volume | 1 | - |
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