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Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition

Title
Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition
Authors
Kim, Se-YunLee, Joon-HyungKim, Jeong-JooHeo, Young-Woo
Issue Date
2018-10
Citation
Ceramics International, 44(15), 17743-17748
Type
Article
Article Type
Article in Press
Keywords
AluminaAluminum oxideChromium compoundsCopper compoundsEnergy gapEpitaxial filmsEpitaxial growthHole concentrationNickelNickel compoundsOptical propertiesPulsed laser depositionSemiconductor dopingThin filmsX ray photoelectron spectroscopyAcceptor levelsCharge compensationCuCrO2DelafossitesEpitaxialHall measurementsOptical energy band gapTransparent conductive oxidesPulsed lasers
ISSN
0272-8842
Abstract
In this study, the structural, electrical, and optical properties of CuCr1−xNixO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 × 1014 to 2.2 × 1017 cm−3 upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+. © 2018
URI
http://hdl.handle.net/20.500.11750/9007
DOI
10.1016/j.ceramint.2018.06.241
Publisher
Elsevier Ltd
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