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Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement
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Title
Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement
DGIST Authors
Kim, Dong HwanKim, ChamKim, Hoyoung
Issued Date
2018-12
Citation
Kim, Dong Hwan. (2018-12). Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement. doi: 10.1016/j.measurement.2018.07.030
Type
Article
Article Type
Article
Subject
Contact resistanceCurrent voltage characteristicsElectric contactsEnergy conversionHeat transferOpen circuit voltagePower generationShort circuit currentsThermal insulating materialsThermoelectric energy conversionConversion characteristicsElectrical contact resistanceInterfacial resistancesInterfacial thermal resistanceOne-dimensional heatPredicting and analyzingThermal interface materialsThermoelectric devicesHeat resistance
ISSN
0263-2241
Abstract
Research on the methodology for predicting and analyzing the performance of a thermoelectric device (TED) can offer various possibilities for enhancing its energy conversion characteristics. In this work, the methodology to determine the electrical contact resistance and the interfacial thermal resistance of a TED was studied. Based on one-dimensional heat transfer equations of power generation mode that includes electrical contact resistance and interfacial thermal resistance, we derived explicit expressions for the open circuit voltage and the short circuit current as the limiting cases of the external electrical load. The measurements of the open circuit voltage and the short-circuit current of TED were carried out for various thermal interface materials (TIMs) between the TED and heat reservoirs under varying compressive forces. The electrical contact resistance and the interfacial thermal resistance of a TED were determined by matching the measured values of the open circuit voltage and the short circuit current of a TED to the results of the analytic model. The electrical contact resistivity of the TED tested was approximately 3 × 10−9 Ωm2, irrespective of the compressive force, the hot-side temperature, and the TIMs. The interfacial thermal resistance varied sensitively with the TIMs and decreased with the compressive forces. © 2018 Elsevier Ltd
URI
http://hdl.handle.net/20.500.11750/9064
DOI
10.1016/j.measurement.2018.07.030
Publisher
Elsevier B.V.
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김동환
Kim, Dong Hwan김동환

Division of Nanotechnology

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