Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hyeon-Jun | - |
| dc.contributor.author | Abe, Katsumi | - |
| dc.contributor.author | Cho, Sung Haeng | - |
| dc.contributor.author | Kim, June Seo | - |
| dc.contributor.author | Bang, Seokhwan | - |
| dc.contributor.author | Lee, Myoung Jae | - |
| dc.date.accessioned | 2018-08-29T05:50:27Z | - |
| dc.date.available | 2018-08-29T05:50:27Z | - |
| dc.date.created | 2018-07-30 | - |
| dc.date.issued | 2018-12 | - |
| dc.identifier.citation | IEEE Journal of the Electron Devices Society, v.6, no.1, pp.830 - 834 | - |
| dc.identifier.issn | 2168-6734 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/9221 | - |
| dc.description.abstract | Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain voltage level. In particular, we observe that these asymmetrical properties depend strongly on this level. Numerical calculations demonstrate that potential barrier lowering in the local area occurs at the drain electrode's edge. © 2013 IEEE. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/JEDS.2018.2855731 | - |
| dc.identifier.wosid | 000440349900001 | - |
| dc.identifier.scopusid | 2-s2.0-85049941812 | - |
| dc.type.local | Article(Overseas) | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
| dc.citation.publicationname | IEEE Journal of the Electron Devices Society | - |
| dc.contributor.nonIdAuthor | Abe, Katsumi | - |
| dc.contributor.nonIdAuthor | Cho, Sung Haeng | - |
| dc.contributor.nonIdAuthor | Bang, Seokhwan | - |
| dc.identifier.citationVolume | 6 | - |
| dc.identifier.citationNumber | 1 | - |
| dc.identifier.citationStartPage | 830 | - |
| dc.identifier.citationEndPage | 834 | - |
| dc.identifier.citationTitle | IEEE Journal of the Electron Devices Society | - |
| dc.type.journalArticle | Article | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.description.isOpenAccess | Y | - |
| dc.subject.keywordAuthor | Oxide semiconductor | - |
| dc.subject.keywordAuthor | InGaZnOx | - |
| dc.subject.keywordAuthor | asymmetrical local defect | - |
| dc.subject.keywordAuthor | barrier lowering | - |
| dc.subject.keywordAuthor | TCAD | - |
| dc.contributor.affiliatedAuthor | Lee, Hyeon-Jun | - |
| dc.contributor.affiliatedAuthor | Abe, Katsumi | - |
| dc.contributor.affiliatedAuthor | Cho, Sung Haeng | - |
| dc.contributor.affiliatedAuthor | Kim, June Seo | - |
| dc.contributor.affiliatedAuthor | Bang, Seokhwan | - |
| dc.contributor.affiliatedAuthor | Lee, Myoung Jae | - |
- Files in This Item:
-
IEEE_JEDS_vol6_p830(2018)_JEDS2855731.pdf
기타 데이터 / 1.12 MB / Adobe PDF download
- Appears in Collections:
- Division of Nanotechnology 1. Journal Articles
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