Communities & Collections
Researchers & Labs
Titles
DGIST
LIBRARY
DGIST R&D
Detail View
Division of Nanotechnology
1. Journal Articles
High-Performance Photovoltaic Effect with Electrically Balanced Charge Carriers in Black Phosphorus and WS2 Heterojunction
Kwak, Do-Hyun
;
Ra, Hyun-Soo
;
Jeong, Min-Hye
;
Lee, A-Young
;
Lee, Jong-Soo
Division of Nanotechnology
1. Journal Articles
Department of Energy Science and Engineering
MNEDL(Multifunctional Nanomaterials & Energy Devices Lab)
1. Journal Articles
Citations
WEB OF SCIENCE
Citations
SCOPUS
Metadata Downloads
XML
Excel
Title
High-Performance Photovoltaic Effect with Electrically Balanced Charge Carriers in Black Phosphorus and WS2 Heterojunction
Issued Date
2018-09
Citation
Kwak, Do-Hyun. (2018-09). High-Performance Photovoltaic Effect with Electrically Balanced Charge Carriers in Black Phosphorus and WS2 Heterojunction. Advanced Materials Interfaces, 5(18). doi: 10.1002/admi.201800671
Type
Article
Author Keywords
charge carrier balance
;
heterojunction p-n diodes
;
photovoltaic effects
;
black phosphorus
;
tungsten disulfide
Keywords
DER-WAALS HETEROSTRUCTURES
;
P-N HETEROJUNCTIONS
;
GATE-TUNABLE DIODE
;
JUNCTIONS
;
PASSIVATION
;
TRANSPORT
;
GRAPHENE
;
FIELD-EFFECT TRANSISTORS
ISSN
2196-7350
Abstract
2D van der Waals materials are promising for various electronic and optoelectronic devices because of their thickness-dependent mobility and tunable bandgap. Recently, heterojunction structures based on 2D van der Waals materials have exhibited their potential for photovoltaic applications as ultrathin p–n diodes. In this study, the photovoltaic effect of a multilayer black phosphorus (BP)/WS2 p–n heterojunction device is demonstrated under the 405 nm laser illumination and the AM 1.5 solar spectrum. The diode-like characteristics and photovoltaic effect rely on balance between charge carriers in the heterojunction device, by showing the highest performance at the balance position. The gate-tunable heterojunction device shows a high current rectification of 103 and an external quantum efficiency of 4.4% under the 405 nm laser illumination, and a photovoltaic efficiency of 4.6% under the AM 1.5 solar spectrum. This work suggests that the balancing of the charge carriers in the 2D heterojunction p–n diode is highly prioritized to fabricate high-performance photovoltaic device. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://hdl.handle.net/20.500.11750/9335
DOI
10.1002/admi.201800671
Publisher
Wiley
Show Full Item Record
File Downloads
There are no files associated with this item.
공유
공유하기
Related Researcher
Kwak, Do-Hyun
곽도현
Division of Nanotechnology
read more
Total Views & Downloads