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Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
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Title
Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
DGIST Authors
Lee, Jae DongKim, Young JaeKim, Chil-Min
Issued Date
2018-09
Citation
Lee, Jae Dong. (2018-09). Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics. doi: 10.1088/1367-2630/aae100
Type
Article
Article Type
Article
Author Keywords
ultrafast processes in condensed matteroptical data storageoptical memories
Keywords
TIMESPECTROSCOPY
ISSN
1367-2630
Abstract
A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. Weexplore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. Wethen propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 x 2 array of four one-bitRAM elements.
URI
http://hdl.handle.net/20.500.11750/9337
DOI
10.1088/1367-2630/aae100
Publisher
Institute of Physics Publishing
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이재동
Lee, JaeDong이재동

Department of Physics and Chemistry

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