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Non-Power-Driven Organic Photodiode via Junction Engineering

Title
Non-Power-Driven Organic Photodiode via Junction Engineering
Author(s)
Nam, Geon-HeeKim, KyounghwanChung, Dae Sung
Issued Date
2019-02
Citation
Nanotechnology, v.30, no.5, pp.055202
Type
Article
Author Keywords
non-power-drivecolor-selective photodiodeSchottky contact
ISSN
0957-4484
Abstract
Here we introduce a junction engineering approach to realize a high performance non-power-driven organic photodiode. To overcome the external power source dependency of conventional photodiodes, in this work, we try not only to implement an inherently large built-in-potential of the junction but also to utilize an inherently low charge carrier concentration of the semiconductor. The strategically designed ITO/plasma-treated ZnO/poly[2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/MoO3/Ag geometry showed near-ideal Schottky junction properties with a high zero-bias built-in potential of 0.54 eV, leading to a zero-bias depletion width of 470 nm. As a result, a green-selective polymeric photodiode with high zero-bias detectivity up to 5 1011 Jones and a low noise equivalent power of 2.98 10-12 W Hz-1/2 are demonstrated, revealing the possibility of a thin film, color-selective and non-power-driven polymeric photodiode for battery-free application. © 2018 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/9463
DOI
10.1088/1361-6528/aaf030
Publisher
IOP Publishing
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Appears in Collections:
Department of Energy Science and Engineering Polymer Energy Materials Lab 1. Journal Articles

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