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DC Field Value Language Nam, Geon-Hee - Kim, Kyounghwan - Chung, Dae Sung - 2018-12-05T07:55:50Z - 2018-12-05T07:55:50Z - 2018-11-26 - 2019-02 -
dc.identifier.issn 0957-4484 -
dc.identifier.uri -
dc.description.abstract Here we introduce a junction engineering approach to realize a high performance non-power-driven organic photodiode. To overcome the external power source dependency of conventional photodiodes, in this work, we try not only to implement an inherently large built-in-potential of the junction but also to utilize an inherently low charge carrier concentration of the semiconductor. The strategically designed ITO/plasma-treated ZnO/poly[2-methoxy-5-(2′-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV)/MoO3/Ag geometry showed near-ideal Schottky junction properties with a high zero-bias built-in potential of 0.54 eV, leading to a zero-bias depletion width of 470 nm. As a result, a green-selective polymeric photodiode with high zero-bias detectivity up to 5 1011 Jones and a low noise equivalent power of 2.98 10-12 W Hz-1/2 are demonstrated, revealing the possibility of a thin film, color-selective and non-power-driven polymeric photodiode for battery-free application. © 2018 IOP Publishing Ltd. -
dc.language English -
dc.publisher IOP Publishing -
dc.title Non-Power-Driven Organic Photodiode via Junction Engineering -
dc.type Article -
dc.identifier.doi 10.1088/1361-6528/aaf030 -
dc.identifier.scopusid 2-s2.0-85058488053 -
dc.identifier.bibliographicCitation Nanotechnology, v.30, no.5, pp.055202 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor non-power-drive -
dc.subject.keywordAuthor color-selective photodiode -
dc.subject.keywordAuthor Schottky contact -
dc.citation.number 5 -
dc.citation.startPage 055202 -
dc.citation.title Nanotechnology -
dc.citation.volume 30 -
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Department of Energy Science and Engineering Polymer Energy Materials Lab 1. Journal Articles


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