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Controlled growth of SbSI thin films from amorphous Sb2S3 for low-temperature solution processed chalcohalide solar cells

Title
Controlled growth of SbSI thin films from amorphous Sb2S3 for low-temperature solution processed chalcohalide solar cells
Author(s)
Choi, Yong ChanHwang, EunjeongKim, Dae-Hwan
Issued Date
2018-12
Citation
APL Materials, v.6, no.12, pp.121108
Type
Article
Keywords
EFFICIENTIODIDEDEPOSITIONSULFURPHASE
ISSN
2166-532X
Abstract
We report a simple solution processing method for fabricating low-temperature SbSI solar cells. The method consists of two steps: the formation of amorphous Sb2S3 and its transformation to SbSI. A pure SbSI phase with a high crystallinity was obtained at a low temperature of 200 °C. In addition, the SbSI morphology was controlled by tuning the input ratio of SbCl3:thiourea and a dense film was obtained at a ratio of 1:1.3. A planar SbSI solar cell thus-fabricated exhibits a short-circuit current density of 5.45 mA cm−2, an open-circuit voltage of 0.548 V, and a fill factor of 0.31, corresponding to a power conversion efficiency of 0.93% under a 100 mW cm−2 illumination condition. © 2018 Author(s).
URI
http://hdl.handle.net/20.500.11750/9549
DOI
10.1063/1.5058166
Publisher
American Institute of Physics Publising LLC
Related Researcher
  • 최용찬 Choi, Yong Chan
  • Research Interests chalcogenides; chalcohalides; solar cells; photovoltaic materials; heavy pnictogen; lead-free; two-dimensional materials
Files in This Item:
2018_2 Controlled growth of SbSI thin films.pdf

2018_2 Controlled growth of SbSI thin films.pdf

기타 데이터 / 3.46 MB / Adobe PDF download
Appears in Collections:
Division of Energy & Environmental Technology 1. Journal Articles
Division of Energy & Environmental Technology Dr. Choi Group @ DGIST 1. Journal Articles

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