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Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors

Title
Role of Hydrogen in Active Layer of Oxide-Semiconductor-Based Thin Film Transistors
Authors
Noh, Hee YeonKim, JoonwooKim, June-SeoLee, Myoung-JaeLee, Hyeon-Jun
DGIST Authors
Noh, Hee Yeon; Kim, Joonwoo; Kim, June-SeoLee, Myoung-JaeLee, Hyeon-Jun
Issue Date
2019-01
Citation
Crystals, 9(2), 75
Type
Article
Article Type
Article
Author Keywords
oxide semiconductorInGaZnOxhydrogenoxygen deficiencytechnology computer aided design (TCAD)
Keywords
DIFFUSION
ISSN
2073-4352
Abstract
Hydrogen in oxide systems plays a very important role in determining the major physical characteristics of such systems. In this study, we investigated the effect of hydrogen in oxide host systems for various oxygen environments that acted as amorphous oxide semiconductors. The oxygen environment in the sample was controlled by the oxygen gas partial pressure in the radio-frequency-sputtering process. It was confirmed that the hydrogen introduced by the passivation layer not only acted as a “killer” of oxygen deficiencies but also as the “creator” of the defects depending on the density of oxide states. Even if hydrogen is not injected, its role can change owing to unintentionally injected hydrogen, which leads to conflicting results. We discuss herein the correlation with hydrogen in the oxide semiconductor with excess or lack of oxygen through device simulation and elemental analysis. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
URI
http://hdl.handle.net/20.500.11750/9615
DOI
10.3390/cryst9020075
Publisher
Multidisciplinary Digital Publishing Institute (MDPI)
Related Researcher
  • Author Lee, Hyeon-Jun  
  • Research Interests 산화물반도체;IGZO;memristor;멤리스터;저항메모리;resistance memory;neuromorphic;device;degradation;hot electron;display device;gate driver;oxide semiconductor
Files:
Collection:
Division of Nanotechnology1. Journal Articles


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