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Optical gain of inelastic exciton-exciton scattering in CdS nanowires

Title
Optical gain of inelastic exciton-exciton scattering in CdS nanowires
Authors
Jang, JuyeongSong, GwangseopKyhm, KwangseukCho, Chang-Hee
DGIST Authors
Cho, Chang-Hee
Issue Date
2019-02
Citation
Applied Physics Letters, 114(8), 081101
Type
Article
Article Type
Article
Keywords
Cadmium sulfideExcitonsII-VI semiconductorsInelastic scatteringNanowiresOptical gainPhononsCdS nanowiresExcited carriersExciton-exciton scatteringMott densityOptical gain spectraP emissionPopulation inversionsVariable stripe lengthsSulfur compounds
ISSN
0003-6951
Abstract
We have performed a variable stripe length method at 5 K to measure the optical gain of CdS nanowires. When the excited carrier density is lower than the Mott density, we found that various inelastic scatterings of excitons and LO-phonons are involved. As a consequence of inelastic exciton-exciton scattering, the excitons scattered down to the low polariton branch cause P-emission lasing, and the excited excitons also result in a population inversion through intra-relaxation. When LO-phonon scatterings are involved, a broad optical gain spectrum is observed resulting from exciton-LO and P-LO scatterings. © 2019 Author(s).
URI
http://hdl.handle.net/20.500.11750/9653
DOI
10.1063/1.5086782
Publisher
American Institute of Physics
Related Researcher
  • Author Cho, Chang-Hee Future Semiconductor Nanophotonics Laboratory
  • Research Interests Semiconductor; Nanophotonics; Light-Matter Interaction
Files:
There are no files associated with this item.
Collection:
Department of Emerging Materials ScienceFuture Semiconductor Nanophotonics Laboratory1. Journal Articles


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