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Proposed Valley Valve from Four-Channel Valley Manipulation
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- Title
- Proposed Valley Valve from Four-Channel Valley Manipulation
- DGIST Authors
- Kim, Youngjae ; Lee, JaeDong
- Issued Date
- 2019-03
- Citation
- Kim, Youngjae. (2019-03). Proposed Valley Valve from Four-Channel Valley Manipulation. doi: 10.1103/PhysRevApplied.11.034048
- Type
- Article
- Article Type
- Article
- Keywords
- Layered semiconductors ; Molybdenum compounds ; Tungsten compounds ; Bi-layer ; Charge current ; Four-channel ; Hall current ; Intra-layer ; Lorentz effects ; Multimodes ; Spin valve ; Landforms
- ISSN
- 2331-7019
- Abstract
-
Suggesting the AB-stacked bilayer WS2/MoS2 heterostructure as an ideal architecture for Berry curvature engineering, we theoretically demonstrate that it is possible to manipulate valley polarizations at K and -K valleys on each layer in a distinguishable fashion and then attempt an operation using four channels of valley manipulations, that is, four pairwise incorporations of KWS2 and (-K)WS2, KMoS2 and (-K)MoS2,KWS2 and KMoS2, and (-K)WS2 and (-K)MoS2, within a frame of the electro-optic method. Four-channel valley manipulation, which provokes varied anomalous Lorentz effects, conveys a development of multimode inverse valley Hall currents comprising two intralayer and one interlayer modes, each of which has a different nonlocal resistance. This finding proposes an alternative discipline of valley valve of valleytronics to manage a variable (multilevel) nonlocal resistance to the valley-mediated nonlocal charge current, in analogy with the spin valve of spintronics. © 2019 American Physical Society.
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- Publisher
- American Physical Society
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