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Proposed Valley Valve from Four-Channel Valley Manipulation

Title
Proposed Valley Valve from Four-Channel Valley Manipulation
Authors
Kim, YoungjaeLee, JaeDong
DGIST Authors
Kim, Youngjae; Lee, JaeDong
Issue Date
2019-03
Citation
Physical Review Applied, 11(3)
Type
Article
Article Type
Article
Keywords
Layered semiconductorsMolybdenum compoundsTungsten compoundsBi-layerCharge currentFour-channelHall currentIntra-layerLorentz effectsMultimodesSpin valveLandforms
ISSN
2331-7019
Abstract
Suggesting the AB-stacked bilayer WS2/MoS2 heterostructure as an ideal architecture for Berry curvature engineering, we theoretically demonstrate that it is possible to manipulate valley polarizations at K and -K valleys on each layer in a distinguishable fashion and then attempt an operation using four channels of valley manipulations, that is, four pairwise incorporations of KWS2 and (-K)WS2, KMoS2 and (-K)MoS2,KWS2 and KMoS2, and (-K)WS2 and (-K)MoS2, within a frame of the electro-optic method. Four-channel valley manipulation, which provokes varied anomalous Lorentz effects, conveys a development of multimode inverse valley Hall currents comprising two intralayer and one interlayer modes, each of which has a different nonlocal resistance. This finding proposes an alternative discipline of valley valve of valleytronics to manage a variable (multilevel) nonlocal resistance to the valley-mediated nonlocal charge current, in analogy with the spin valve of spintronics. © 2019 American Physical Society.
URI
http://hdl.handle.net/20.500.11750/9740
DOI
10.1103/PhysRevApplied.11.034048
Publisher
American Physical Society
Related Researcher
  • Author Lee, JaeDong Light and Matter Theory Laboratory
  • Research Interests Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
Files:
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Collection:
Department of Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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