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A 1-v 4.6-mw/channel fully differential neural recording front-end ic with current-controlled pseudoresistor in 0.18-mm cmos

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dc.contributor.author Lee, Taeju -
dc.contributor.author Hong, Soonyoung -
dc.contributor.author Jung, Chongsoo -
dc.contributor.author Lee, Junghyup -
dc.contributor.author Je, Minkyu -
dc.date.accessioned 2019-05-09T06:19:13Z -
dc.date.available 2019-05-09T06:19:13Z -
dc.date.created 2019-04-12 -
dc.date.issued 2019-02 -
dc.identifier.issn 1598-1657 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/9826 -
dc.description.abstract This paper presents a fully differential implantable neural recording front-end IC for monitoring neural activities. Each analog front-end (AFE) consists of a low-noise amplifier (LNA), a variable gain amplifier (VGA), and a buffer. The output signal of the AFE is digitized through a successive approximation register analog-to-digital converter (SAR ADC). The LNA adopts the current-reuse technique to improve the current efficiency, achieving the power consumption as low as 0.95 mW. The implemented LNA has the gain of 40 dB, the low-pass cutoff frequency of 10 kHz, and the high-pass cutoff frequency of sub-1 Hz which is realized using the current-controlled pseudoresistor. The VGA controls the gain from 21.9 dB to 33.9 dB for efficient digitization while consuming the power of 0.35 mW. The buffer drives the capacitive DAC of the ADC and consumes the power of 3.28 mW. The fabricated AFE occupies the area of 0.11 mm 2 /Channel and consumes 4.6 mW/Channel under 1-V supply voltage. Each channel achieves the input-referred noise of 2.88 mV rms , the NEF of 2.38, and the NEF 2 V DD of 5.67. The front-end IC is implemented in a standard 1P6M 0.18-mm CMOS process. © 2019, Institute of Electronics Engineers of Korea. All rights reserved. -
dc.language English -
dc.publisher Institute of Electronics Engineers of Korea -
dc.title A 1-v 4.6-mw/channel fully differential neural recording front-end ic with current-controlled pseudoresistor in 0.18-mm cmos -
dc.type Article -
dc.identifier.doi 10.5573/JSTS.2019.19.1.030 -
dc.identifier.wosid 000465139300005 -
dc.identifier.scopusid 2-s2.0-85063517762 -
dc.identifier.bibliographicCitation Journal of Semiconductor Technology and Science, v.19, no.1, pp.30 - 41 -
dc.identifier.kciid ART002437938 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Current-reuse -
dc.subject.keywordAuthor Fully differential front-end -
dc.subject.keywordAuthor Low-noise amplifier -
dc.subject.keywordAuthor Low-power -
dc.subject.keywordAuthor Neural recording -
dc.subject.keywordAuthor Noise efficiency factor -
dc.subject.keywordAuthor Biomedical device -
dc.subject.keywordAuthor Current-controlled pseudoresistor -
dc.subject.keywordPlus CMOS integrated circuits -
dc.subject.keywordPlus Cutoff frequency -
dc.subject.keywordPlus Differential amplifiers -
dc.subject.keywordPlus Efficiency -
dc.subject.keywordPlus Energy efficiency -
dc.subject.keywordPlus Neurophysiology -
dc.subject.keywordPlus Noise efficiency factors -
dc.subject.keywordPlus Low noise amplifiers -
dc.subject.keywordPlus Analog to digital conversion -
dc.subject.keywordPlus Variable gain amplifiers -
dc.subject.keywordPlus Voltage regulators -
dc.subject.keywordPlus Biomedical devices -
dc.subject.keywordPlus Current reuse -
dc.subject.keywordPlus Front end -
dc.subject.keywordPlus Low Power -
dc.subject.keywordPlus Neural recordings -
dc.citation.endPage 41 -
dc.citation.number 1 -
dc.citation.startPage 30 -
dc.citation.title Journal of Semiconductor Technology and Science -
dc.citation.volume 19 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.description.journalRegisteredClass kci -
dc.relation.journalResearchArea Engineering; Physics -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Physics, Applied -
dc.type.docType Article -
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이정협
Lee, Junghyup이정협

Department of Electrical Engineering and Computer Science

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