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High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp

Title
High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp
Authors
Jo, Jeong-WanKim, Kyung-TaePark, Ho-HyunPark, Sung KyuHeo, Jae SangKim, InsooLee, Myoung-Jae
DGIST Authors
Lee, Myoung-Jae
Issue Date
2019-06
Citation
Journal of the Korean Physical Society, 74(11), 1052-1058
Type
Article
Article Type
Article
Author Keywords
Metal-oxide semiconductorsLow temperature solution-processThin-film transistorFlash lamp annealingRoll-to-roll process
Keywords
HIGH-PERFORMANCESINGLE-LAYERIN2O3
ISSN
0374-4884
Abstract
An efficient photo-annealing approach for high-performance solution-processed metal-oxide thin film transistors (TFTs) was demonstrated by using programmable pulse operation of xenon flash lamp. The flash lamp annealing (FLA) process could offer not only low-temperature (≈100° C) processing but also ultra-fast annealing speed of the order of seconds under air ambient conditions. Solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) TFTs implemented by the FLA process typically exhibited much improved electrical performance such as saturation mobility of >10.8 cm2V−11s−1, ION/IOPP of >108, and subthreshold slope of as steep as 0.24 V/dec. X-ray photoelectron spectroscopy analysis of a-IGZO films indicates that the FLA can provide sufficient activation energy for rapid formation of solid a-IGZO bonds within 30 s. The high-quality metal-oxide films achieved by an atmospheric and low temperature FLA method may represent a significant advance for scalable fabrication of flexible and printed metal-oxide electronics. © 2019, The Korean Physical Society.
URI
http://hdl.handle.net/20.500.11750/9989
DOI
10.3938/jkps.74.1052
Publisher
한국물리학회
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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