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Showing results 1 to 8 of 8

Article
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
  • Baik, Seunghun ; 
  • Kwon, Hyeokjin ; 
  • Paeng, Chuck ; 
  • Zhang, He ; 
  • Kalkofen, Bodo ; 
  • Jang, Jae Eun ; 
  • Kim, Y. S. ; 
  • Kwon, Hyuk-Jun
  • 2019-09
  • Baik, Seunghun. (2019-09). Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process. IEEE Electron Device Letters, 40(9), 1507–1510. doi: 10.1109/LED.2019.2931404
  • Institute of Electrical and Electronics Engineers
  • View : 717
  • Download : 0

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Article
Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method
  • 2020-09
  • Baik, Seunghun. (2020-09). Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method. IEEE Access, 8, 172166–172174. doi: 10.1109/ACCESS.2020.3024636
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 705
  • Download : 237
Article
Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process
  • 2024-05
  • Baik, Seunghun. (2024-05). Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process. Journal of Alloys and Compounds, 984. doi: 10.1016/j.jallcom.2024.173952
  • Elsevier
  • View : 220
  • Download : 0
Article
High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment
  • 2022-08
  • Jeong, Heejae. (2022-08). High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment. IEEE Electron Device Letters, 43(8), 1315–1318. doi: 10.1109/LED.2022.3182730
  • Institute of Electrical and Electronics Engineers
  • View : 597
  • Download : 0
Article
Low-temperature laser crystallization of Ge layers grown on MgO substrates
  • Baek, Jongyeon ; 
  • Kim, Seung-Hwan ; 
  • Jeong, Heejae ; 
  • Nguyen, Manh-Cuong ; 
  • Baek, Daeyoon ; 
  • Baik, Seunghun ; 
  • Nguyen, An Hoang-Thuy ; 
  • Baek, Jong-Hwa ; 
  • Kim, Hyung-jun ; 
  • Kwon, Hyuk-Jun ; 
    • et al
  • 2023-01
  • Baek, Jongyeon. (2023-01). Low-temperature laser crystallization of Ge layers grown on MgO substrates. Applied Surface Science, 609. doi: 10.1016/j.apsusc.2022.155368
  • Elsevier B.V.
  • View : 402
  • Download : 0
Article
Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration
  • Kim, Dongsu ; 
  • Jeong, Heejae ; 
  • Pyo, Goeun ; 
  • Heo, Su Jin ; 
  • Baik, Seunghun ; 
  • Kim, Seonhyoung ; 
  • Choi, Hong Soo ; 
  • Kwon, Hyuk-Jun ; 
  • Jang, Jae Eun
  • 2024-07
  • Kim, Dongsu. (2024-07). Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration. Advanced Science, 11(28). doi: 10.1002/advs.202401250
  • Wiley
  • View : 358
  • Download : 0

Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation

Article
Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation
  • 2023-11
  • Baik, Seunghun. (2023-11). Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation. Applied Surface Science, 638. doi: 10.1016/j.apsusc.2023.157967
  • Elsevier BV
  • View : 510
  • Download : 91

Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts

Article
Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts
  • Kwon, Hyeokjin ; 
  • Baik, Seunghun ; 
  • Jang, Jae Eun ; 
  • Jang, Jaewon ; 
  • Kim, Sunkook ; 
  • Grigoropoulos, Costas P. ; 
  • Kwon, Hyuk Jun
  • 2019-02
  • Kwon, Hyeokjin. (2019-02). Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts. Electronics, 8(2). doi: 10.3390/electronics8020222
  • MDPI AG
  • View : 669
  • Download : 132
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