Cited 2 time in webofscience Cited 2 time in scopus

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Title
Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method
Authors
Baik, SeunghunKwon, Dong-JaeKang, HongkiJang, Jae EunJang, JaewonKim, Y. S.Kwon, Hyuk-Jun
DGIST Authors
Baik, Seunghun; Kwon, Dong-Jae; Kang, HongkiJang, Jae Eun; Jang, Jaewon; Kim, Y. S.; Kwon, Hyuk-Jun
Issue Date
2020-09
Citation
IEEE Access, 8, 172166-172174
Type
Article
Article Type
Article
Author Keywords
Three-dimensional displaysSurface treatmentSiliconDoping profilesUltra-shallow junctionphosphorusplasma assisted dopinglaser annealing processAnnealingPlasmas
Keywords
DOPANT DIFFUSIONSPREADING RESISTANCEINDUCED DEFECTSPOINT-DEFECTSSILICONPHOSPHORUSPROFILESDAMAGEFLASH
ISSN
2169-3536
Abstract
Recently, a shallow and conformal doping profile is required for promising 3D structured devices. In this study, we deposited the dopant phosphorus (P) using modified plasma assisted doping (PaD) followed by an annealing process to electrically activate the dopants. A rapid thermal annealing process (RTP) was the first approach tested for activation but it resulted in a deep junction ( > 35 nm). To reduce the junction depth, we tried the fiash lamp annealing process (FLP) to shorten the annealing time. We also predicted the annealing temperature by numerical thermal analysis, which reached 1,020 degrees C. However, the FLP resulted in a deep junction (similar to 30 nm), which was not shallow enough to suppress short channel effects. Since an even shorter annealing process was required to form a ultra-shallow junction, we tried the laser annealing process (LAP) as a promising alternative. The LAP, which had a power density of 0.3 J/cm(2), increased the surface temperature up to 1,100 degrees C with a shallow isothermal layer. Using the LAP, we achieved a USJ with an activated surface dopant concentration of 3.86 x 10(19) cm(-3) and a junction depth of 10 nm, which will allow further scaling-down of devices.
URI
http://hdl.handle.net/20.500.11750/12560
DOI
10.1109/ACCESS.2020.3024636
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kang Lab.1. Journal Articles
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Jang Lab.1. Journal Articles
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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